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  • 1
    Electronic Resource
    Electronic Resource
    Laser-assisted low temperature processing of Pb(Zr, Ti)O3 thin film (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1958-1960 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method for lowering the processing temperature of PbZr1−xTixO3 (PZT) films was developed utilizing a laser-assisted two-step process. In the first step, perovskite phase was initiated in the PZT films to a furnace anneal at low temperatures in the range of 470–550 °C, depending on the Zr/Ti ratio. Later, the films were laser annealed (using KrF excimer laser) at room temperature to grow the perovskite phase, and to improve microstructure and ferroelectric properties. It was found that this two-step process was very effective in producing excellent quality ferroelectric PZT films at low temperatures. It should be noted that although laser annealing of amorphous and/or pyrochlore films directly (one-step process) produced perovskite phase, the ferroelectric properties of these films, irrespective of the composition, were rather unattractive. Some possible reasons for the ineffectiveness of the one-step process were discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122334
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  • 2
    Electronic Resource
    Electronic Resource
    Size effects of 0.8SrBi2Ta2O9–0.2Bi3TiNbO9 thin films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1610-1612 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The size effects of 0.8SrBi2Ta2O9–0.2Bi3TiNbO9 thin films, prepared by metalorganic deposition technique, were studied by determining how the ferroelectric properties vary with film thickness and grain size. It was found that the ferroelectric properties were determined by the grain size, and not by the thickness of the film in our studied thickness range of 80–500 nm. A 80 nm thick film showed good ferroelectric properties similar to the 500 nm thick film. The possible mechanisms for the size effects in SBT–BTN films are discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366872
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  • 3
    Electronic Resource
    Electronic Resource
    Low temperature fabrication and properties of sol-gel derived (111) oriented Pb(Zr1−xTix)O3 thin films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2686-2688 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel processing method is developed for preparing sol-gel derived Pb(Zr1−xTix)O3 (x=0.47) thin films on Pt/Ti/SiO2/Si substrates. Using a modified precursor solution and a rapid heat treatment without pyrolysis, it was possible to obtain highly (111) oriented PZT thin films with high perovskite content at a low annealing temperature of 550 °C. The low temperature processing was assisted by taking advantage of the heterogeneous nucleation of the PZT films, which reduces the activation energy for perovskite phase formation. Using this method, the PZT thin films exhibited better dielectric and ferroelectric properties at 550 °C than those reported by other methods. For example, the PZT films annealed at 550 °C showed a well-saturated hysteresis loop at an applied voltage of 5 V with Pr and Ec of 12 μC/cm2 and 38 kV/cm, and their dielectric constant and dissipation factor at a frequency of 100 kHz were 410 and 0.021, respectively. The leakage current density was lower than 10−8 at an applied electric field of 150 kV/cm. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121099
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  • 4
    Electronic Resource
    Electronic Resource
    Metalorganic chemical vapor deposition of ferroelectric SrBi2Ta2O9 thin films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 616-618 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric layered-oxides SrBi2Ta2O9 thin films were prepared on Pt coated Si wafers and single-crystal sapphire by metalorganic chemical vapor deposition (MOCVD). The films were specular and crack-free and showed complete crystallization at temperatures between 650 and 700 °C. Good ferroelectric properties were obtained for a 200 nm thick film with Pt electrodes: 2Pr and Ec were about 8.3 μC/cm2 and 60 kV/cm, respectively. The leakage currents were as low as 8×10−9 A/cm2 at 150 kV/cm. The films also showed fatigue-free characteristics: no fatigue was observed up to 1.4×1010 switching cycles. These high quality MOCVD films make high-intensity ((approximately-greater-than)1 Mbit) nonvolatile memory devices possible. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116486
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