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  • 1
    Electronic Resource
    Electronic Resource
    Laser-assisted low temperature processing of Pb(Zr, Ti)O3 thin film (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1958-1960 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method for lowering the processing temperature of PbZr1−xTixO3 (PZT) films was developed utilizing a laser-assisted two-step process. In the first step, perovskite phase was initiated in the PZT films to a furnace anneal at low temperatures in the range of 470–550 °C, depending on the Zr/Ti ratio. Later, the films were laser annealed (using KrF excimer laser) at room temperature to grow the perovskite phase, and to improve microstructure and ferroelectric properties. It was found that this two-step process was very effective in producing excellent quality ferroelectric PZT films at low temperatures. It should be noted that although laser annealing of amorphous and/or pyrochlore films directly (one-step process) produced perovskite phase, the ferroelectric properties of these films, irrespective of the composition, were rather unattractive. Some possible reasons for the ineffectiveness of the one-step process were discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122334
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical properties of highly reliable plug buffer layer for high-density ferroelectric memory (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2377-2379 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A CoSi2 buffer layer was prepared in polycrystalline silicon (polysilicon) plug for preventing an undesired microvoid between the polysilicon plug and Ir/Ti diffusion barrier. Since the microvoid generates random function fail, resulting in low wafer yield of a 4 Mb ferroelectric random access memory device, we developed the thermally stable CoSi2 buffer layer for eliminating the random single bit fails. The ferroelectric capacitors using the CoSi2 buffer layer showed a low contact resistance of 96 Ω per contact in 1k serial contact array with contact size of 0.6 μm, and also exhibited great ferroelectric properties such as remnant polarization and coercive voltage of 20 μC/cm2 and 1.2 V, respectively. Scanning electron microscopy analyses confirmed that no microvoid was formed between the interface between the Ir/Ti barrier layer and the CoSi2 buffer layer. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1467619
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  • 3
    Electronic Resource
    Electronic Resource
    Integration and electrical properties of diffusion barrier for high density ferroelectric memory (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 451-453 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A reliable Ir diffusion barrier was prepared on polysilicon plugged substrate with a contact size of 0.6 μm. Using a Ti adhesion layer and stress-relief process, it was possible to integrate the Ir barrier into a high density 4 Mb ferroelectric random access memory device. After heat treating sol-gel derived Pb(Zr1−xTix)O3 (PZT) films at 700 °C, the Ir barrier contact displayed an ohmic behavior and showed a low resistance of 130 Ω per contact in 1k serial contact array. The PZT films on Pt/IrO2/Ir poly-plugged substrate exhibited excellent ferroelectric properties such as remnant polarization and coercive voltage of 25 μC/cm2 and 1.15 V, respectively. Auger depth profile and transmission electron microscopy analyses confirmed that no appreciable oxidation was formed between the Ir barrier and the polysilicon plug. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125784
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  • 4
    Electronic Resource
    Electronic Resource
    Low temperature fabrication and properties of sol-gel derived (111) oriented Pb(Zr1−xTix)O3 thin films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2686-2688 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel processing method is developed for preparing sol-gel derived Pb(Zr1−xTix)O3 (x=0.47) thin films on Pt/Ti/SiO2/Si substrates. Using a modified precursor solution and a rapid heat treatment without pyrolysis, it was possible to obtain highly (111) oriented PZT thin films with high perovskite content at a low annealing temperature of 550 °C. The low temperature processing was assisted by taking advantage of the heterogeneous nucleation of the PZT films, which reduces the activation energy for perovskite phase formation. Using this method, the PZT thin films exhibited better dielectric and ferroelectric properties at 550 °C than those reported by other methods. For example, the PZT films annealed at 550 °C showed a well-saturated hysteresis loop at an applied voltage of 5 V with Pr and Ec of 12 μC/cm2 and 38 kV/cm, and their dielectric constant and dissipation factor at a frequency of 100 kHz were 410 and 0.021, respectively. The leakage current density was lower than 10−8 at an applied electric field of 150 kV/cm. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121099
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