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  • 1
    Electronic Resource
    Electronic Resource
    Electronic structure of ytterbium-doped strontium fluoroapatite: Photoemission and photoabsorption investigation (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5135-5140 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoemission and x-ray photoabsorption were used to study the composition and the electronic structure of ytterbium-doped strontium fluoroapatite (Yb:S-FAP). High resolution photoemission measurements on the valence band electronic structure and Sr 3d, P 2p and 2s, Yb 4d and 4p, F 1s, and O 1s core lines were used to evaluate the surface and near surface chemistry of this fluoroapatite. Element specific density of unoccupied electronic states in Yb:S-FAP were probed by x-ray absorption spectroscopy at the Yb 4d (N4,5 edge), Sr 3d (M4,5 edge), P 2p (L2,3 edge), F 1s, and O 1s (K edges) absorption edges. These results provide measurements of the electronic structure and surface chemistry of this material. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1459601
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  • 2
    Electronic Resource
    Electronic Resource
    X-ray diffraction and x-ray absorption studies of porous silicon, siloxene, heat-treated siloxene, and layered polysilane (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1946-1951 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Several porous silicon, siloxene (Si6H6O3), heat-treated siloxene, and layered polysilane (Si6H6) samples have been studied with K- and L-edge x-ray photoabsorption, photoemission, and powder x-ray diffraction. The x-ray absorption of layered polysilane and porous-Si are found to be remarkably similar. In particular, the K absorption edges of these samples shift by about 0.4–0.6 eV to higher energy relative to crystalline silicon. Siloxene samples heated to 400 °C in inert gas are best described as a mixture of SiO2 and amorphous-Si. When heat-treated siloxene is studied by photoelectron spectroscopy (surface sensitive) it resembles SiO2, when it is studied by x-ray absorption (bulk and surface) features from both SiO2 and amorphous-Si are observed and when it is studied by x-ray diffraction (bulk measurement) it resembles amorphous-Si. The SiO2 is therefore predominantly at the surface and heat-treated siloxene is very small amorphous-Si particles coated with SiO2. The Si L edge of heat-treated siloxene is not shifted significantly with respect to crystalline Si, unlike that of porous-Si, as-prepared siloxene, or layered polysilane. Taken together, these results suggest that heat-treated siloxene does not resemble electrochemically prepared porous-Si but that it might resemble rapid thermal annealed porous-Si. On the other hand, we believe that layered polysilane and unheated porous-Si may be related.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356342
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  • 3
    Electronic Resource
    Electronic Resource
    Nanodispersed silicon in pregraphitic carbons (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2363-2369 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using chemical-vapor deposition nanodispersed silicon has been prepared in carbon at temperatures between 850 and 1050 °C. Samples with up to 11% atomic silicon in carbon show the same pregraphitic x-ray-diffraction pattern as those without silicon. X-ray-absorption spectroscopy shows that the silicon is bonded mostly to carbon neighbors and that large clusters of silicon are not found. It is believed that silicon atoms, or small clusters of a few silicon atoms, are located in regions of "unorganized carbon'' which separate small regions of organized graphene layers. These materials may have application as electrode materials in advanced rechargeable lithium batteries. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358759
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  • 4
    Electronic Resource
    Electronic Resource
    Photoelectron spectroscopy measurements of the band gap in porous silicon (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2911-2913 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoemission and x-ray absorption spectroscopy show that both the conduction and valence bands of porous silicon are shifted relative to the bands for bulk silicon, as expected in the quantum confinement model for the optical properties of porous silicon. The shift in the valence band is larger than the shift in the conduction band and proportional to it, with a proportionality constant that is consistent with effective mass theory. No oxygen is detected in the as-prepared porous silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110270
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  • 5
    Electronic Resource
    Electronic Resource
    Oxide thickness effect and surface roughening in the desorption of the oxide from GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 464-466 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature for thermal desorption of the gallium oxide from GaAs is shown to increase linearly with oxide thickness. In addition, we show by diffuse light scattering that highly polished GaAs substrates roughen during the oxide desorption. These results are interpreted in terms of a model in which the oxide evaporates inhomogeneously.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105437
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  • 6
    Electronic Resource
    Electronic Resource
    Evidence for quantum confinement in porous silicon from soft x-ray absorption (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 3013-3015 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of x-ray absorption in the vicinity of the silicon L edge in porous silicon show a blueshift and a broadening of the conduction band edge, consistent with a distribution of quantum confinement energies. The absorption spectrum for porous silicon can be fit by a broadened and energy-shifted version of the crystalline silicon absorption spectrum. The average quantum shift and broadening used in the fit to the absorption spectrum are in reasonable agreement with the corresponding parameters derived from the photoluminescence spectrum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106793
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  • 7
    Electronic Resource
    Electronic Resource
    Electronic Structure and Crystalline Coherence in Fe/Si Multilayers (1999)
    Springer
    Journal of cluster science 10 (1999), S. 591-599 
    Details
    ISSN: 1572-8862
    Keywords: X-Ray emission spectra; magnetic multilayers ; electronic structure ; thin-film growth ; interlayer coupling
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Soft x-ray fluorescence spectroscopy has been used to examine the electronic structure of deeply buried silicide thin films that arise in Fe/Si multilayers. These systems exhibit antiferromagnetic (AF) coupling of the Fe layers, despite their lack of a noble metal spacer layer found in most GMR materials. Also, the degree of coupling is very dependent on preparation conditions, especially spacer layer thickness and growth temperature. The valence band spectra are quite different for films with different spacerlayer thickness yet are very similar for films grown at different growth temperatures. The latter result is surprising since AF coupling is strongly dependent on growth temperature. Combining near-edge x-ray absorption with the fluorescence data demonstrates that the local bonding structure in the silicide spacer layer in epitaxial films which exhibit AF coupling are metallic. These results indicate the equal roles of crystalline coherence and electronic structure in determining the magnetic properties of these systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1021917427431
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