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  • 1
    Electronic Resource
    Electronic Resource
    Magnetic properties of epitaxial and polycrystalline Fe/Si multilayers : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4772-4774 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe/Si multilayers with antiferromagnetic interlayer coupling have been grown via ion-beam sputtering on both glass and single-crystal substrates. High-angle x-ray diffraction measurements show that both sets of films have narrow Fe peaks, implying a large crystallite size and crystalline iron silicide spacer layers. Low-angle x-ray diffraction measurements show that films grown on glass have rougher interfaces than those grown on single-crystal substrates. The multilayers grown on glass have a larger remanent magnetization than the multilayers grown on single-crystal substrates. The observation of magnetocrystalline anisotropy in hysteresis loops and (hkl) peaks in x-ray diffraction demonstrates that the films grown on MgO and Ge are epitaxial. The smaller remanent magnetization in Fe/Si multilayers with better layering suggests that the remanence is not an intrinsic property. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361926
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  • 2
    Electronic Resource
    Electronic Resource
    Anomalous temperature dependence of interlayer coupling in Fe/Si multilayers (abstract) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4775-4775 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic coupling of the Fe layers in Fe/Si multilayers strongly depends on the morphology of the iron-silicide interlayer that forms during deposition. Antiferromagnetic interlayer coupling is only observed in Fe/Si multilayers with crystalline interlayers in the CsCl structure. Recently, it has been shown that single layers of Fe–Si in the CsCl structure can be grown epitaxially on Si over a range of stoichiometries. FeSi films are reported to be Kondo insulators below 50 K. We find evidence of a magnetic phase transition in antiferromagnetically coupled Fe/Si multilayers. Ms measured in a constant applied field of 50 kOe shows T3/2 behavior down to 10 K. However, M(T) at a lower constant field peaks around 50 K and decreases at lower temperature, indicating enhanced antiferromagnetic coupling or a phase transition. The remanent magnetization increases monotonically with decreasing temperature and has been explained by invoking thermally activated coupling. However, the saturation field also increases with decreasing temperature, indicating a stronger antiferromagnetic interaction. We explore the suggestion that the interlayer coupling is biquadratic in nature. Polarized neutron reflectometry has also been used to get a clearer picture of the complicated magnetic behavior of this multilayer system. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361861
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  • 3
    Electronic Resource
    Electronic Resource
    Cryogenically cooled multiple-substrate holder for high vacuum (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 3870-3870 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A novel design is presented for a cryogenically cooled multisubstrate sample holder for thin film deposition in high vacuum. The cryogen flows through tubing soldered onto a fixed copper plate, while the substrates are mounted on a separate tray that is supported by a linear/rotary-motion feedthrough. By lowering the substrate tray into firm contact with the copper plate, substrate temperatures as low as 120 K can be achieved. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145184
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  • 4
    Electronic Resource
    Electronic Resource
    Exchange anisotropy in polycrystalline and epitaxial (001)-oriented NiO/NiFe bilayers grown by ion beam sputtering (abstract) : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5374-5374 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The connection between the spin structure of antiferromagnetic NiO and the exchange anisotropy observed in NiO/NiFe bilayers is not well understood. For instance, the NiO bulk-terminated (001) surface is compensated, and therefore simple models predict no exchange bias in (001)-oriented NiFe/NiO bilayers.1 Using a newly developed ion-beam sputtering (IBS) process to deposit NiO exchange-coupled films,2 we have simultaneously grown polycrystalline and epitaxial NiO/NiFe bilayers. NiO grown on NiFe/MgO is polycrystalline, while NiO grown directly on MgO is epitaxial. The in-plane orientation of the epilayers was confirmed using (hk0) x-ray diffraction. The exchange anisotropy in epitaxial (001)-oriented bilayers is about half as large as that observed in polycrystalline bilayers. The size of the exchange anisotropy does not depend on the orientation of the bias field with respect to the in-plane NiFe/NiO crystallographic direction, indicating that the same interfacial spin structure is achieved regardless of the bias field direction. These results show that the surface NiO spin structure is different from that of the bulk, and is uncompensated at the interface independent of the crystalline orientation of the bilayer. Results on epitaxial Co/NiO and NiFe/NiCoO bilayers will also be discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364602
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  • 5
    Electronic Resource
    Electronic Resource
    Electronic Structure and Crystalline Coherence in Fe/Si Multilayers (1999)
    Springer
    Journal of cluster science 10 (1999), S. 591-599 
    Details
    ISSN: 1572-8862
    Keywords: X-Ray emission spectra; magnetic multilayers ; electronic structure ; thin-film growth ; interlayer coupling
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Soft x-ray fluorescence spectroscopy has been used to examine the electronic structure of deeply buried silicide thin films that arise in Fe/Si multilayers. These systems exhibit antiferromagnetic (AF) coupling of the Fe layers, despite their lack of a noble metal spacer layer found in most GMR materials. Also, the degree of coupling is very dependent on preparation conditions, especially spacer layer thickness and growth temperature. The valence band spectra are quite different for films with different spacerlayer thickness yet are very similar for films grown at different growth temperatures. The latter result is surprising since AF coupling is strongly dependent on growth temperature. Combining near-edge x-ray absorption with the fluorescence data demonstrates that the local bonding structure in the silicide spacer layer in epitaxial films which exhibit AF coupling are metallic. These results indicate the equal roles of crystalline coherence and electronic structure in determining the magnetic properties of these systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1021917427431
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