Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
70 (1997), S. 2108-2110
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Extended x-ray absorption fine structure above the Ga–K edge has been used to study the local structure of AlxGa1−xN films grown by metal organic chemical vapor deposition. With increasing Al content, x, the Ga–N bond length decreases, but much less than the average bond length. On the other hand, the x dependence of the Ga–Ga and Ga–Al distances does follow the variation of the average cation–cation distance. We conclude that bond angle distortions accommodate the differences between the Ga–N and Al–N bond lengths. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.118963
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