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  • 1
    Electronic Resource
    Electronic Resource
    Growth of Er-doped silicon using metalorganics by plasma-enhanced chemical vapor deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 551-558 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of Er-doped silicon films has been performed by plasma-enhanced chemical vapor deposition at low temperature (430 °C) using an electron cyclotron resonance source. The goal was to incorporate an optically active center, erbium surrounded by nitrogen, through the use of the metalorganic compound tris (bis trimethyl silyl amido) erbium. Films were analyzed by Rutherford backscattering spectrometry, secondary ion mass spectroscopy, and high resolution x-ray diffraction. The characteristic 1.54 μm emission was observed by photoluminescence spectroscopy. Previous attempts to incorporate the complex (ErO6) using tris (2,2,6,6-tetramethyl- 3,5-heptanedionato) erbium (III) indicated that excessive carbon contamination lowered epitaxial quality and reduced photoluminescent intensity. In this study, chemical analysis of the films also revealed a large carbon concentration, however, the effect on epitaxial quality was much less destructive. A factorial design experiment was performed whose analysis identified the key processing parameters leading to high quality luminescent films. Hydrogen was found to be a major cause of crystal quality degradation in our metalorganic plasma-enhanced process. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362759
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  • 2
    Electronic Resource
    Electronic Resource
    Erbium-doped silicon films grown by plasma-enhanced chemical-vapor deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6241-6248 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of erbium-doped silicon films has been performed by plasma-enhanced chemical vapor deposition using an electron-cyclotron-resonance source. The goal was to incorporate erbium as an optically active center (ErO6) through the use of metal-organic dopant sources. The characteristic 1.5 μm emission was observed by photoluminescence. Chemical analysis of the film revealed, however, that the organic ligands were decomposing and contributing to the carbon contamination of the films. Analysis of the molecular flux to the substrate indicated that the metal-organic compound used, tris(2,2,6,6-tetramethyl-3-5-heptanedionato)erbium(III), was most likely to decompose, and supply unbonded atomic erbium and not the optical active species, ErO6. Excessive carbon contamination lowered epitaxial quality and reduced the photoluminescent intensity. Photoluminescent intensity was improved by a 600 °C anneal but was strongly quenched by a 900 °C anneal. The low-temperature anneal improved crystal quality, and the high-temperature anneal resulted in silicide formation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360571
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  • 3
    Electronic Resource
    Electronic Resource
    Inversion induced in silicon by corona-charged PVDF, P(VDF/TriFE), and P(VDF/ClTriFE) (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2644-2655 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polyvinylidene fluoride, as well as two of its copolymers made with trifluoroethylene and cholorotrifluoroethylene, respectively, is cast onto p-type silicon substrates and positively corona charged. This produces a strong induced inversion at the oxide-passivated silicon surface. Field-effect transistor structures are used to monitor the strength and stability of the inversion, which is seen to decay in a period of time dependent on the polymer and on the fabrication conditions. When a thicker (200–500 A(ring)) thermally grown SiO2 barrier layer is included between the silicon and polymer film, the devices are much more stable, remaining in inversion for many weeks. The physical and dielectric properties of the solution-cast polymer films are studied in order to gain a better understanding of the initial charge distributions and of the charge-transport properties associated with inversion layer decay in the thin oxide (12 A(ring)) structures. Instability in these devices appears to be more appropriately described by a space-charge-limited current model than by a Schottky emission model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348658
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  • 4
    Electronic Resource
    Electronic Resource
    Increased surface voltage relaxation times in polyvinylidene fluoride films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 750-752 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An increase in surface voltage decay time has been noted in corona-charged polyvinylidene fluoride films solution cast on silicon, once these films have been charged a number of times and annealed. A re-examination of the fundamental equations that describe these surface voltage decays shows that the relaxation of the electric field inside the polymer may be considerably lengthened, when the trapped charge density is comparable to the thermal free- carrier density.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351338
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  • 5
    Electronic Resource
    Electronic Resource
    Surface trap creation in polyvinylidene fluoride and poly(vinylidene fluoride/trifluoroethylene) on peeling from a silicon substrate (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 753-755 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Open-circuit dark-surface potential measurements on corona-charged solution cast films of polyvinylidene fluoride and a copolymer of vinylidene fluoride and trifluoroethylene show a slower decay after these films have been mechanically peeled from their silicon substrates. It is proposed that peeling produces a thin region of high trap density in the interface layer close to the peeled surface. A simple model of surface voltage decay is presented which accounts for near-surface trapping due to peeling as well as bulk trapping. Practical ranges for the interface layer thickness and trapping density are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351339
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  • 6
    Electronic Resource
    Electronic Resource
    Inversion layer instability in a P(VDF/TriFE)/silicon transistor structure: Effect of oxygen exposure/polymer porosity, interface, and bulk trapping (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5756-5765 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A copolymer of vinylidene fluoride and trifluoroethylene is solution cast onto a p-type silicon wafer to produce an enhancement field-effect transistor structure. A strong inversion is induced at the silicon surface when an aluminum gate electrode is suitably biased. When the gate is left floating, the inversion layer decays with time. Both the initial strength of this inversion and its rate of decay are found to depend on the charging history of the device, as well as the oxygen concentration in the surrounding gas ambient. The oxygen sensitivity is due to the large gas permeability of the cast film as compared to commercially extruded film. A novel method for directly measuring these permeabilities is presented. All aspects of device behavior may be treated in a single model where the inversion layer decay is shown to be a function of interface and bulk trapping in the polymer as well as ambient oxygen concentration. Excellent agreement between theory and results is obtained. The physical significance of all model parameters and their relation to device behavior under different experimental conditions is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351930
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  • 7
    Electronic Resource
    Electronic Resource
    Low-temperature homoepitaxial growth of Si by electron cyclotron resonance plasma enhanced chemical vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 971-973 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Si films have been deposited at low substrate temperatures of 400 and 500 °C, by plasma enhanced chemical vapor deposition using an electron cyclotron resonance source. Samples were analyzed using Rutherford backscatter spectrometry, cross-sectional transmission electron microscopy, and x-ray diffraction. The ion-to-adatom arrival ratio was found to be an important parameter in determining epitaxial film quality. This ratio was controlled by the SiH4 feed rate, microwave power level, and shape of the magnetic field in the substrate region. Incident ion energy and ion flux were monitored with a gridded energy analyzer located at the substrate location. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114962
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  • 8
    Electronic Resource
    Electronic Resource
    Epitaxial film thickness in the low-temperature growth of Si(100) by plasma enhanced chemical vapor deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 349-351 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The limiting epitaxial thickness of Si films grown at a low substrate temperature by plasma enhanced chemical vapor deposition has been determined. The specific process used was electron cyclotron resonance plasma deposition. The limiting epitaxial thickness was found to decrease with the ratio of energetic ion-to-adatom arrivals on the substrate surface. The measured epitaxial thicknesses are similar to those obtained in previous investigations using molecular beam epitaxy. Hydrogen surface coverage does not appear to be a factor in limiting epitaxial thickness. The maximum epitaxial thickness remains to be determined for this process and substrate temperature range. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116712
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  • 9
    Electronic Resource
    Electronic Resource
    Serious childhood angiomas: unsuccessful alpha-2b interferon treatment. A report of four cases (1993)
    Oxford, UK : Blackwell Publishing Ltd
    British journal of dermatology 129 (1993), S. 0 
    Details
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Over a 4-year period, we managed four children with alarming haemangiomas (two cases of Kasabach-Merritt syndrome and two life-threatening haemangiomas). Systemic steroid therapy was ineffective. Other treatments (radiotherapy, anti-platelet drugs) were also ineffective in the Kasabach-Merritt patients. On the basis of recent reports on the effects of interferon on endothelial cells, we used alpha-2 interferon therapy, but obtained no response.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2133.1993.tb03181.x
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  • 10
    Electronic Resource
    Electronic Resource
    Expression of GM-CSF receptor by Langerhans' cell histiocytosis cells (1995)
    Springer
    Virchows Archiv 427 (1995), S. 125-129 
    Details
    ISSN: 1432-2307
    Keywords: Langerhans cell ; Histiocytosis ; Human ; Immunohistochemistry ; GM-CSF receptor ; CDw116
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Langerhans' cell histiocytosis (LCH) is characterized by the proliferation of large mononucleated cells containing Birbeck granules and expressing CD1a. Recent studies have demonstrated that LCH is a clonal proliferation; however, its aetiology is still unknown. Growth and differentiation of bone-marrow-derived cells are controlled by cytokines. The proliferation, differentiation and activation of normal Langerhans cells are controlled by granulocyte/macrophage colony-stimulating factor (GM-CSF) in vitro. Therefore, GM-CSF could be implicated in the pathogenesis of LCH. Indeed, LCH cells contain GM-CSF, and children with disseminated LCH have an elevated GM-CSF serum level. As a cytokine only acts on cells expressing a specific receptor, we investigated the presence of GM-CSF receptor on LCH cells. Fourteen frozen tissue samples from children with LCH were studied by in situ immunohistochemistry with two mouse monoclonal antibodies specific for the α chain of the GM-CSF receptor (CDw116). LCH cells of all the samples were positively stained with both antibodies. This study suggests that GM-CSF may be a growth factor for LCH cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00196516
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