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  • 1
    Electronic Resource
    Electronic Resource
    Sputter deposition of highly 〈100+001〉-textured tetragonal barium titanate on unheated silica using a neon discharge (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3045-3046 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The sputter deposition of highly 〈100+001〉-textured tetragonal BaTiO3 on unheated substrates using a pressed powder BaTiO3 target and a radio frequency-excited Ne discharge is reported. For comparison, amorphous BaTiO3 was also produced, using an Ar discharge operated at the same value of all other independent process parameters. In situ discharge diagnostics using optical emission spectrometry was used to study the plasma volume. Data show that there was atomic Ti but no atomic Ba in the Ne discharge used to produce t-BaTiO3. However, both atomic Ba and Ti were identified in the Ar discharge used to produce a-BaTiO3. A probable source of free Ba atoms in the plasma is the reduction of BaTiO3 at the target surface due to the sputtering action of Ar+ ions. By comparison with other sputter-deposited metal oxide systems, the effect on film crystallinity of atomic metal versus molecular metal oxide flux incident on the substrate is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350991
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Wet oxidation of GeSi at 700 °C (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4015-4018 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: About 500-nm-thick films of Ge0.36Si0.64 and Ge0.28Si0.72 grown epitaxially on (100)Si have been oxidized at 700 °C in wet ambient. A uniform GexSi1−xO2 oxide layer forms with a smooth interface between it and the unoxidized GexSi1−x layer below. The composition and structure of that layer remains unchanged as monitored by backscattering spectrometry or cross-sectional transmission electronic microscopy. The oxide of both samples grows as square root of oxidation duration. The parabolic rate constant increases with the Ge content and is larger than that for wet oxidation of pure Si at the same temperature. The absence of a regime of linear growth at this relatively low temperature indicates a much enhanced linear rate constant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350847
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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