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  • 1
    Electronic Resource
    Electronic Resource
    Laser induced surface deformations on silicon
    Amsterdam : Elsevier
    Physics Letters A 72 (1979), S. 60-62 
    Details
    ISSN: 0375-9601
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0375-9601(79)90527-9
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Transition-metal silicides formed by ion mixing and by thermal annealing: Which species moves? (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3087-3093 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The moving species during the formation of Pt2Si, Ni2Si, and CrSi2 by both ion mixing with 300–600 keV Xe ions and thermal annealing is identified with inert markers using backscattering spectrometry. Samples of metal-on-silicon and silicon-on-metal have been used, evaporated on SiO2 substrates with two very thin markers (Mo for Pt2Si, W for Ni2Si and CrSi2) placed at the metal–silicon interface, and at the bottom interface with the SiO2 substrate. Monitoring the separation of the two markers as a function of the amount of silicide formed determines the ratio of atomic transport through the growing silicide layer. The results establish that the dominant moving species in both silicide formation processes is the same for the refractory metal-silicide CrSi2, e.g., Si, whereas different atomic transport ratios are found in the case of the near-noble metal silicides Pt2Si and Ni2Si. This outcome is discussed in terms of high-temperature effects during thermal formation of transition-metal silicides.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335809
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Sputtering of NbSi"2 and CoSi"2
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 7-8 (1985), S. 784-787 
    Details
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0168-583X(85)90469-0
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  • 4
    Electronic Resource
    Electronic Resource
    Dotieren von Silizium mit Hilfe des Lasers (1978)
    Springer
    Zeitschrift für angewandte Mathematik und Physik 29 (1978), S. 722-722 
    Details
    ISSN: 1420-9039
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01601500
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Laser drilling in heat sensitive components (1977)
    Springer
    Zeitschrift für angewandte Mathematik und Physik 28 (1977), S. 1182-1187 
    Details
    ISSN: 1420-9039
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics , Physics
    Description / Table of Contents: Zusammenfassung Anhand eines theoretischen Modells zum Laser-Bohrprozess [2] und der Wärmeleittheorie wird die Temperaturverteilung in einem Target während und nach dem Bohrprozess untersucht. Die Resultate werden angewendet, um Löcher durch das Substrat von LED's bis 15 μm an die aktive Schicht heran zu bohren, ohne diese thermisch zu zerstören.
    Notes: Abstract From a theoretical model of the laser drilling process [2] and from heat conduction theory the temperature distribution in a target during and after drilling is investigated. The results are applied to the drilling of holes through the substrate of LED's up to 15 μm beneath the active region without damaging them thermally.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01601696
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  • 6
    Electronic Resource
    Electronic Resource
    Laser assisted doping of Si with Ga or As (1979)
    Springer
    Zeitschrift für angewandte Mathematik und Physik 30 (1979), S. 839-843 
    Details
    ISSN: 1420-9039
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics , Physics
    Description / Table of Contents: Zusammenfassung Gallium- oder Arsen- beschichtetesp- undn- Silizium wurde mit Pulsen eines Nd: YAG Lasers bestrahlt, um dotierte Oberflächenschichten zu erzeugen. Auf diese Weise wurden ohm'sche Kontakte und Dioden hergestellt. Elektrische Messungen zeigten eine Abhängigkeit der Kontaktwiderstände von der Laserintensität. Die Widerstandswerte von Ga dotiertem Silizium lagen in der gleichen Grössenordnung wie diejenigen von As dotiertem Silizium.
    Notes: Abstract Silicon wafers ofp- andn-type have been coated with gallium or arsenic and then irradiated with Nd: YAG laser pulses in order to obtain doped surface layers. Ohmic contacts and diodes have been produced with this method. Electrical measurements showed that the resistance is a function of laser power density. Only a weak difference in resistance between Ga-doped silicon and As-doped silicon was found.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01590693
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Temperature dependent preferential sputtering in CoSi2 and NbSi2 (1985)
    Springer
    Applied physics 37 (1985), S. 19-23 
    Details
    ISSN: 1432-0630
    Keywords: 79.20.Nc ; 64.75.+g ; 66.30.Jt
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Sputtering of CoSi2 and NbSi2 has been carried out by Xe ion bombardment at room temperature, as well as at elevated temperatures putting these systems in their radiation-enhanced diffusion regimes. The range of the Xe ions (at 200–260 keV) was appreciably less than the thickness of the silicides. The samples were analyzed by 2 MeV He+ backscattering spectrometry, x-ray diffraction and optical microscopy. The ratio of the sputtering yield of Si to that of the metal (i.e., Co or Nb) always exceeds the stoichiometric ratio 2∶1, leading to Si depleted surface layers. The amount of the sputtered species increases almost linearly with dose until intermixing of the silicide with the underlying Si becomes appreciable. This happens at lower doses in the radiation-enhanced diffusion regime than at room temperature. Irradiation of CoSi2 samples at high temperature leads to a broadening of the implanted Xe profile compared to the room temperature profile. No such phenomenon has been found in NbSi2. The effect of Xe broadening on the sputtering yields is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617864
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  • 8
    Electronic Resource
    Electronic Resource
    Glass-forming ability in laser quenched transition-metal Alloys (1984)
    Springer
    Applied physics 33 (1984), S. 93-96 
    Details
    ISSN: 1432-0630
    Keywords: 81.20.P ; 61.40.D ; 61.80.B
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The glass-forming ability by laser quenching is investigated for several transition metal systems (Au-Ti, Co-Ti, Cr-Ti, Zr-Ti). Metallic glasses are obtained in the systems Au-Ti, Co-Ti, and Cr-Ti. The results are compared to predictions by several semiempirical criteria of glass-forming ability. Our results indicate that at the cooling rates typical to laser quenching glasses in binary metallic systems form whenever diffusionless crystallization is excluded.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617614
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