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  • 1
    Electronic Resource
    Electronic Resource
    Quantitative determination of urinary protein components of children with postural proteinuria (1983)
    Springer
    European journal of pediatrics 140 (1983), S. 268-272 
    Details
    ISSN: 1432-1076
    Keywords: Postural proteinuria ; Urinary protein components ; Upright lordotic posture
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Twenty-one protein components were measured in urine specimens from 12 subjects with postural proteinuria in the recumbent posture and after a period of upright lordotic posture. The lordotic posture produced an increased urinary excretion of total protein and 19 protein components, particularly of albumin, IgG globulin, and transferrin (128, 68, and 167-fold, respectively). However, 90 min after the lordotic posture, most of the protein components returned to initial values, whereas albumin, IgG globulin, and transferrin remained high. β2-Microglobulin, retinol binding protein, and lysozyme showed the smallest increases after the lordotic posture. These findings suggest that proteinuria occurring after the lordotic posture may be characterized by an increased glomerular permeability.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00443374
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  • 2
    Electronic Resource
    Electronic Resource
    In vitro synthesis of β- and γ-isoactins by messenger RNA of rat ascites hepatoma
    Amsterdam : Elsevier
    BBA Section Nucleic Acids And Protein Synthesis 607 (1980), S. 81-91 
    Details
    ISSN: 0005-2787
    Keywords: (Hepatoma) ; Isoactin ; Protein synthesis ; Translational control ; mRNA
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0005-2787(80)90222-1
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  • 3
    Electronic Resource
    Electronic Resource
    Interlayer exchange in (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As semiconducting ferromagnet/nonmagnet/ferromagnet trilayer structures (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2122-2124 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic properties of all-semiconductor (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As trilayer structures are studied. The interactions between the two ferromagnetic (Ga,Mn)As layers are investigated by magnetotransport measurements in a number of samples with different GaAs thickness or with different Al content in the intermediary nonmagnetic (Al,Ga)As layer. The results indicate that carriers present in the nonmagnetic layer mediate the coupling between the two ferromagnetic layers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122398
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  • 4
    Electronic Resource
    Electronic Resource
    Spin-dependent scattering in semiconducting ferromagnetic (Ga,Mn)As trilayer structures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6436-6438 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spin-dependent scattering in ferromagnet/nonmagnet/ferromagnet (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As trilayer structures was studied. An increase of sheet resistance was observed when the magnetizations of the two ferromagnetic (Ga,Mn)As layers were aligned anti-parallel, which was realized by the different coercivity of the two (Ga,Mn)As layers with different compositions. This is the first demonstration of spin-dependent scattering in magnetic multilayer structures made of semiconductor-materials alone. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372730
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  • 5
    Electronic Resource
    Electronic Resource
    Spin-dependent tunneling and properties of ferromagnetic (Ga,Mn)As (invited) (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4277-4282 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature molecular beam epitaxy allows one to dope GaAs with Mn over its solubility limit, making it possible to realize a III–V-based diluted magnetic semiconductor (Ga,Mn)As. Magnetization measurements revealed that (Ga,Mn)As is ferromagnetic at low temperatures. The ferromagnetic transition temperature Tc can be as high as 110 K for 5% Mn. Magnetotransport properties of (Ga,Mn)As were found closely related to its magnetic properties. The temperature and magnetic-field B dependence of resistivity ρ can be understood in terms of spin-dependent scattering. The p–d exchange determined from the B dependence of ρ is shown to be consistent with the exchange expected from Tc based on the Ruderman–Kittel–Kasuya–Yosida interaction. The anomalous Hall effect dominates the Hall resistance up to room temperature, allowing one to determine the magnetic properties from the magnetotransport measurements alone. Since (Ga,Mn)As can be grown pseudomorphically on GaAs, one can introduce ferromagnetism in GaAs-based heterostructures such as resonant tunneling diodes and observe spin-dependent phenomena in current–voltage characteristics. Magneto-optical properties of (Ga,Mn)As films are also presented. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370343
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  • 6
    Electronic Resource
    Electronic Resource
    Magnetoresistance effect and interlayer coupling of (Ga, Mn)As trilayer structures (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1873-1875 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the magnetic and magnetotransport properties of (Ga, Mn)As/(Al, Ga)As/(Ga, Mn)As semiconductor-based magnetic trilayer structures. We observe a weak ferromagnetic interlayer coupling between the two ferromagnetic (Ga, Mn)As layers as well as magnetoresistance effects due to spin-dependent scattering and to spin-dependent tunneling. Both the coupling strength and the magnetoresistance ratio decrease with the increase of temperature and/or the increase of Al composition of the nonmagnetic (Al, Ga)As layer. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1310626
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  • 7
    Electronic Resource
    Electronic Resource
    Spontaneous splitting of ferromagnetic (Ga, Mn)As valence band observed by resonant tunneling spectroscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 363-365 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current–voltage characteristics of AlAs/GaAs/AlAs double barrier resonant tunneling diodes with ferromagnetic p-type (Ga, Mn)As on one side and p-type GaAs on the other have been studied. A series of resonant peaks have been observed in both polarities, i.e., injecting holes from p-type GaAs and from (Ga, Mn)As. When holes are injected from the (Ga, Mn)As side, spontaneous resonant peak splitting has been observed below the ferromagnetic transition temperature of (Ga, Mn)As without magnetic field. The temperature dependence of the splitting is explained by the the spontaneous spin splitting in the valence band of ferromagnetic (Ga, Mn)As. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121835
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