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  • 1
    Electronic Resource
    Electronic Resource
    A Fabry-Perot interferometer for sub-meV x-ray energy resolution : The 9th National conference on synchrotron radiation instrumentation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3380-3381 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The optical theory of Fabry-Perot interferometers (FPIs) for x rays using dynamically diffracting thin perfect crystals as reflectors is developed. Application to a device using high diffraction orders in silicon crystals of thickness of the order of 100 μm or more shows that energy resolutions of the order of a tenth of a meV are achievable. The effect that various features, such as gap and mirror thickness, lattice mismatches, etc., have on the FPI resonances is studied. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147321
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Theoretical analysis of an anisotropic metal–semiconductor–metal optoelectronic mixer (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3880-3890 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a detailed study of the optoelectronic mixing effect in metal–semiconductor–metal detectors. Both analytical and numerical results are presented and the anisotropic effect is included in the calculations. Under transient bias voltage, the device shows two transient current responses: a fast one related to the displacement current and a slow one related to removal of carriers from the device. The mixing efficiency of the device increases with an increase in applied ac voltage and decreases with an increase in ac frequency. For anisotropic devices, rectification current exists. This rectification current varies not only with the ac voltage and optical power, but also with the ac frequency. This variation in current results in a self-clutter signal being observed in the experiments. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1448676
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  • 3
    Electronic Resource
    Electronic Resource
    Measurements of InGaAs metal–semiconductor–metal photodetectors under high-illumination conditions (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2848-2850 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on temporal response measurements of InGaAs metal–semiconductor–metal photodetectors (MSM–PDs) under high-illumination conditions. The peak current efficiency of the MSM–PDs decreases as optical pulse energy increases due to space-charge-screening effects. The screening effect begins to occur at an optical pulse energy as low as 1.0 pJ, as predicted by a recent two-dimensional model. The fall time and full width at half maximum of the impulse response increase as the optical pulse energy increases and decrease as the bias voltage increases. For optical pulse energies between 1.0 and 100 pJ, the rise time displays a U-shaped behavior as the bias voltage increases. This may be associated with the shape of the electron velocity-field characteristic in conjunction with the screening of the dark field by optical generated carriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1473235
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