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  • 1
    Electronic Resource
    Electronic Resource
    Sensory Quality and Lipid Oxidation of Maize Porridge as Affected by Iron Amino Acid Chelates and EDTA (1999)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 64 (1999), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Iron fortification could reduce the high prevalence of iron deficiency in countries where diets are cereal-based. The sensory quality and storage stability of iron-fortified maize were evaluated by descriptive analysis and hexanal production. Porridge was prepared from maize either unfortified or fortified with 30 or 60 mg iron/kg as ferrous sulfate, bisglycinate, trisglycinate, or NaFeEDTA, then stored at 30,40 or 50°C for 20 days. Fifteen judges, trained in descriptive analysis rated the intensity of 20 sensory attributes of 28 samples. Hexanal production was measured by static headspace gas chromatography. Bisglycinate produced the most rancidity. Iron fortification with bisglycinate lowered the sensory quality and storage stability of maize.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1999.tb15903.x
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  • 2
    Electronic Resource
    Electronic Resource
    Melting point depression of Al clusters generated during the early stages of film growth: Nanocalorimetry measurements (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1098-1100 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work investigates the thermodynamic properties of small structures of Al using an ultrasensitive thin-film differential scanning calorimeter. Al thin films were deposited onto a Si3N4 surface via thermal evaporation over a range of thicknesses from 6 to 50 Å. The Al films were discontinuous and formed nanometer-sized clusters. Calorimetry measurements demonstrated that the melting point of the clusters is lower than the value for bulk Al. We show that the melting point of the clusters is size dependent, decreasing by as much as 140 °C for 2 nm clusters. The results have relevance in several key areas for Al metallization in micro-electronics including the early stages of film growth and texture formation, the Al reflow process, and the dimensional stability of high aspect ratio Al lines. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120946
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  • 3
    Electronic Resource
    Electronic Resource
    Low resistance ohmic contacts on wide band-gap GaN (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1003-1005 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a new metallization process for achieving low resistance ohmic contacts to molecular beam epitaxy grown n-GaN (∼1017 cm−3) using an Al/Ti bilayer metallization scheme. Four different thin-film contact metallizations were compared during the investigation, including Au, Al, Ti/Au, and Ti/Al layers. The metals were first deposited via conventional electron-beam evaporation onto the GaN substrate, and then thermally annealed in a temperature range from 500 to 900 °C in a N2 ambient using rapid thermal annealing techniques. The lowest value for the specific contact resistivity of 8×10−6 Ω cm2, was obtained using Ti/Al metallization with anneals of 900 °C for 30 s. X-ray diffraction and Auger electron spectroscopy depth profile were employed to investigate the metallurgy of contact formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111961
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  • 4
    Electronic Resource
    Electronic Resource
    Reactive ion etching of GaN using BCl3 (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 887-888 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactive ion etching with SiCl4 and BCl3 of high quality GaN films grown by plasma enhanced molecular beam epitaxy is reported. Factors such as gas chemistry, flow rate, and microwave power affecting the etching rate are discussed. The etch rate has been found to be larger with BCl3 than with SiCl4 plasma. An etch rate of 8.5 A(ring)/s was obtained with the BCl3 plasma for a plasma power of 200 W, pressure of 10 mTorr, and flow rate of 40 sccm. Auger electron spectroscopy (AES) was used to investigate the surface of GaN films after etching. Oxygen contamination has been detected from the AES profiles of etched GaN samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110985
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  • 5
    Electronic Resource
    Electronic Resource
    Solid-state reaction-mediated low-temperature bonding of GaAs and InP wafers to Si substrates (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 772-774 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a low-temperature wafer bonding method for the realization of integration of GaAs- and InP-based optoelectronic devices with Si microelectronic devices. This method uses a Au-Ge eutectic alloy as the bonding material sandwiched between GaAs and Si wafers, and between InP and Si wafers. The bonding process was carried out at 280–300 °C by taking advantage of the low-temperature solid-state reactions occurring at GaAs/Au-Ge, InP/Au-Ge, and Si/Au-Ge interfaces. Both the simple mechanical test and standard thermal cycling test prove excellent structural integrity of the joined wafers. Structural analyses reveal only limited interfacial reactions as well as solid-phase epitaxial regrowth of GeSi alloys on the Si substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111008
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  • 6
    Electronic Resource
    Electronic Resource
    1 000 000 °C/s thin film electrical heater: In situ resistivity measurements of Al and Ti/Si thin films during ultra rapid thermal annealing (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 417-419 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We introduce a new technique for rapidly heating (106 °C/s) thin films using an electrical thermal annealing (ETA) pulse technique. By applying a high-current dc electrical pulse to a conductive substrate-heater material (Si), joule heating occurs thus heating the thin film. This method was demonstrated by heating thin films of aluminum at rates ranging from 103 to 106 °C/s. The temperature of the system is measured by using the substrate heater as a thermistor and is found to be within ≈±10 °C during anneals at ≈105 °C/s. Phase transformations in the Ti-Si system were also observed using in situ resistivity measurements during ETA at ≈104 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111116
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  • 7
    Electronic Resource
    Electronic Resource
    YBa2Cu3O7−y/Y2BaCuO5 composites: Growth and characterization (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 446-450 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have prepared thin film composites of Y1Ba2Cu3O7−y ("123'') and Y2Ba1Cu1O5 ("211'') by off-axis sputtering from separate targets of the 123 and 211 material. X-ray diffraction on the films shows the presence of c-axis oriented 123, and (00L) ordered Y2O3, but no indication of 211 lines. The c-axis lattice constant does not show any change compared to our pure 123 films. As the volume percentage of 211 material increases, we see a reduction in Tc and Jc, and an increase in the resistivity. The temperature and field dependence of the critical current are different for our composites compared to our pure 123 films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355278
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  • 8
    Electronic Resource
    Electronic Resource
    Reaction paths and kinetics of aluminide formation in Al/epitaxial-W(001) model diffusion barrier systems (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 194-203 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal bcc W(001) layers, 140 nm thick, were grown on MgO(001) substrates by ultrahigh-vacuum (UHV) magnetron sputter deposition at Ts=600 °C. Al overlayers, 190 nm thick with strong (001) and (011) preferred orientation and an average grain size of 200 nm, were then deposited at Ts=100 °C without breaking vacuum. Changes in bilayer sheet resistance Rs were monitored continuously as a function of time ta and temperature Ta during UHV annealing. In addition, Rutherford backscattering spectroscopy, x-ray diffraction, transmission electron microscopy (TEM), and scanning TEM, in which cross-sectional specimens were analyzed by energy-dispersive x-ray analysis with a 1 nm resolution, were used to follow area-averaged and local interfacial reaction paths as well as microstructural changes as a function of annealing conditions. The initial reaction products were discontinuous regions of monoclinic-structure WAl4 which exhibit a crystallographic relationship with the underlying W layer. bcc WAl12 forms at a later stage and grows conformally to cover both W and WAl4. WAl4 and WAl12 continue to grow, with W being the primary mobile species, until the Al layer is completely consumed. Information from the microchemical and microstructural analyses was used to model the Rs(Ta,ta) results based upon a multielement equivalent circuit approach which accounts for the observed nonplanar nature of the reaction front. Reaction kinetics and activation energies were determined. The results show that the growth of WAl4 is diffusion limited with an activation energy Ea of 3.1 eV while the formation of WAl12 is reaction limited with Ea=3.3 eV. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360651
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  • 9
    Electronic Resource
    Electronic Resource
    Morphology and transport of YBa2Cu3O7−x sputtered in argon, oxygen, and hydrogen: Dependence on deposition temperature (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6780-6787 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: YBa2Cu3O7−x films have been deposited on MgO by reactive, off-axis magnetron sputtering in an argon, oxygen, and hydrogen gas mixture. The material and electrical properties of the films were studied for deposition temperatures from 600 to 760 °C. The films, all approximately 300 nm thick, were predominantly a-axis oriented when deposited at or below 620 °C but were c-axis oriented when deposited at temperatures above 640 °C. The surfaces of films deposited between 640 and 710 °C were partially covered with a-axis grains. Surface roughness measurements indicated the smoothest films occurred for deposition temperatures below 680 °C. Resistance ratios as great as 3.1 were observed for some films. Transition temperatures exceeded 89 K and resistivities at 100 K were less than 150 μΩ cm for the best films. Low-temperature critical current densities exceeded 107 A/cm2 for films deposited from 640 to 720 °C. The temperature dependence of the critical current density near the transition temperature had a power law dependence of nearly 3/2 for deposition temperatures below 690 °C. The power law dependence decreased for increasing deposition temperatures, dropping to nearly 1.1 in the film deposited at 750 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355077
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  • 10
    Electronic Resource
    Electronic Resource
    Effect of CO2 enrichment and elevated temperature on methane emissions from rice, Oryza sativa (1999)
    Oxford, UK : Blackwell Science Ltd
    Global change biology 5 (1999), S. 0 
    Details
    ISSN: 1365-2486
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Energy, Environment Protection, Nuclear Power Engineering , Geography
    Notes: Methane emissions from rice grown within Temperature Gradient Greenhouse Tunnels under doubled CO2 concentrations were 10–45 times less than emissions from control plants grown under ambient CO2. For two cultivars of rice (cvs. Lemont and IR-72), methane emissions increased with a temperature increase of 2°, from outdoor ambient temperatures to the first cell of the ambient CO2 tunnel (ambient temperature + 2 °C). Within both tunnels and for both cultivars methane emissions decreased with further temperature increases (from 2° to 5 °C above ambient). Carbon dioxide enrichment stimulated both above- and below-ground production. Our original hypothesis was that increased CO2 would stimulate plant productivity and therefore stimulate methane emission, since direct linkages between these parameters have been observed. We hypothesize that CO2 enrichment led to the attenuation of methane production due to increased delivery of oxygen to the rhizosphere because of increased root biomass and porosity. The increased root biomass due to elevated CO2 may have more effectively aerated the soil, suppressing methane production. However, this study may be unique because the low organic content (〈 1%) of the sandy soils in which the rice was grown created very little oxygen demand.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2486.1999.00252.x
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