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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 34 (1978), S. 362-367 
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Plane-wave Pendellösung effects are shown to be effective and very sensitive for analyzing minute strains in silicon crystals with dimensions normally used for practical applications. In a triple-crystal silicon X-ray spectrometer with an angular beam divergence of less than 0.1" the Pendellösung effect is very pronounced for sample thicknesses up to 1.2 mm. Strain fields are shown for silicon crystals implanted with 60 keV phosphorus ions for doses down to 1013 ion cm-2 and the limit of resolution is one order of magnitude less.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 34 (1978), S. 84-87 
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Polarization measurements of the primary X-ray beam produced by thick copper and tungsten anodes are reported and formulas derived for integrated intensities of Bragg reflections in energy-dispersive diffractometry with the polarization of the primary beam taken into account. It was found that for an angle of 45° between the scattering plane and the plane containing the electron beam and the primary beam, the influence of polarization vanishes, while it increases as the angle changes from 45° to either 0 or 90°. For the latter values, the influence of polarization is considerable at high photon energies and at scattering angles close to 90°.
    Type of Medium: Electronic Resource
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