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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5920-5922 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Finite-size scaling effects in CoO, an antiferromagnetic insulator with localized moments, have been observed in CoO/SiO2 multilayers. The Néel temperatures of the CoO layers, as determined by susceptibility measurements, shows a finite-size scaling relation with a shift exponent of λ=1.6±0.1. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1967-1969 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A trilayer system consisting of an antiferromagnet (CoO) sandwiched by two ferromagnetic (NiFe=Ni81Fe19) layers of unequal thicknesses has been studied. Four different spin structures have been observed. The temperature dependencies of the exchange fields (HE) and coercivity (Hc) have been determined. The layer order between the antiferromagnet and the ferromagnet dictates the exchange field temperature behavior. © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The antiferromagnet/ferromagnet exchange coupling giving rise to a shifted hysteresis loop has usually been considered an interfacial effect. We show evidence that this exchange coupling between an antiferromagnet (CoO) and a ferromagnet (Ni81Fe19) is long range in nature. Exchange coupling has been observed in tri-layer films consisting of a nonmagnetic noble metal (Ag, Au, and Cu) spacer layer sandwiched between 300 Å CoO and 300 Å NiFe. The strength of the coupling decreases with increasing spacer layer thickness and vanishes at about 55 Å. This suggests that the antiferromagnetic/ferromagnetic exchange coupling is beyond an interfacial effect, and that conduction electrons may be involved in the mediation of the coupling. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7522-7524 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetotransport properties of single crystal trilayers 60 Å Co2MnGe/NM/30 Å Co2MnGe where NM is a nonmagnetic spacer material has been studied. The samples were grown by molecular beam epitaxy on GaAs (001) substrates. The 2 to 1 ratios in thickness of the Co2MnGe layers allows for the easy determination of which ferromagnetic layers have switched during magnetometry measurements. A weak 90° coupling has been observed in trilayers with either a Mn or a V spacer layer. In these coupled films a giant magnetoresistance type magnetoresistance of less than 1% has been measured at room temperature. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5463-5465 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystal Co2MnGe Heusler alloy films were epitaxially grown on GaAs substrates by molecular beam epitaxy. The films have the bulk L21 crystal structure as determined by reflection high energy electron diffraction patterns and x-ray diffraction. A high saturation moment of 1006 emu/cm3 at room temperature has been measured. Ferromagnetic resonance of these ordered alloy films shows narrow linewidths and a small anisotropy. A room temperature resistivity of 115 μΩ cm and a 0.11% anisotropic magnetoresistance has also been determined. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4589-4591 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a simple method to measure the transport spin polarization of ferromagnetic materials. This technique relies on the fact that the Andreev reflection process at the interface between a superconductive and normal is influenced by the spin polarization P of the normal metal. In a very short time we have been able to measure the spin polarization of several metals: NixFe1−x, Ni, Co, Fe, NiMnSb, La0.7Sr0.3MnO3, and CrO2, whose spin polarization ranges from 35% to 90%. Our results compare well with other methods for measuring P. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5066-5068 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular beam epitaxy has been used to stabilize FexCo1−x alloy films over the entire composition range on diamond (100) substrates. Below a critical thickness, the films are single crystal face- centered-cubic (fcc) as determined from reflection high energy electron diffraction. Superconducting quantum interference device magnetometry studies reveal a nonmonotonic increase in the magnetization of the fcc alloys with Fe concentration, while ferromagnetic resonance indicates a small magnetic anisotropy for x〉20%. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6124-6126 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new type of doubly exchange-biased Ni50Co50O/NiFe/Cu/NiFe/Ni30Co70O spin-valve structure, with two ferromagnetic layers exchange biased in opposite directions by two different antiferromagnetic layers is demonstrated. By field cooling in magnetic fields of opposite directions, the resultant hysteresis loop consists of two loops shifted in opposite directions from the zero magnetic field. The NiFe layers are in the antiparallel state in zero magnetic field, and the switching to the parallel state can be tuned by varying the exchange bias. The modified spin valves also show potential for suppressed Barkhausen noise.© 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3789-3791 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly spin-polarized chromium dioxide (CrO2) thin films were deposited on (100) TiO2 substrates by chemical vapor deposition using chromyl chloride as a precursor. The spin polarization, as measured by the point contact Andreev reflection technique, was 81±3%. X-ray diffraction θ/2θ scans indicated the films grew completely (100) oriented, in registry with the (100) oriented TiO2 substrate. X-ray diffraction φ scans on the CrO2 (110) reflection indicated the expected twofold symmetry, with no evidence of misaligned material. The resistivity at room temperature was 240 μΩ cm and decreased to 10 μΩ cm at 5 K, consistent with metallic behavior. The films were ferromagnetic with a Curie temperature of 395 K and a coercivity of ∼100 Oe at 298 K. The use of chromyl chloride as a precursor resulted in efficient and controlled CrO2 film growth. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2739-2741 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated a thin film magnetic system consisting of nanoscale Mn11Ge8 ferromagnetic clusters embedded in a MnxGe1−x dilute ferromagnetic semiconductor matrix. The clusters form for growth temperatures of ∼300 °C with an average diameter and spacing of 100 and 150 nm, respectively. While the clusters dominate the magnetic properties, the matrix plays a subtle but interesting role in determining the transport properties. Variable range hopping at low temperatures involves both nanoclusters and MnGe sites, and is accompanied by a negative magnetoresistance attributed in part to spin-dependent scattering analogous to metallic granular systems. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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