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  • 1
    Electronic Resource
    Electronic Resource
    Quantifying electrical spin injection: Component-resolved electroluminescence from spin-polarized light-emitting diodes (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3098-3100 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spin-polarized light-emitting diode (spin-LED) is a very effective tool for accurately quantifying electrical spin injection in a model independent manner. We resolve and identify various components which occur in the electroluminescence (EL) spectra of GaAs quantum-well-based spin-LEDs, and examine the circular polarization of each. While a number of components exhibit significant circular polarization, the values do not necessarily reflect the electrical spin injection efficiency. We show that a reliable measure of spin injection efficiency can be obtained only if one takes care to spectroscopically resolve and accurately identify the free exciton or free carrier components of the EL spectrum, and exclude other components. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1416164
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetoresistance of Mn:Ge ferromagnetic nanoclusters in a diluted magnetic semiconductor matrix (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2739-2741 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated a thin film magnetic system consisting of nanoscale Mn11Ge8 ferromagnetic clusters embedded in a MnxGe1−x dilute ferromagnetic semiconductor matrix. The clusters form for growth temperatures of ∼300 °C with an average diameter and spacing of 100 and 150 nm, respectively. While the clusters dominate the magnetic properties, the matrix plays a subtle but interesting role in determining the transport properties. Variable range hopping at low temperatures involves both nanoclusters and MnGe sites, and is accompanied by a negative magnetoresistance attributed in part to spin-dependent scattering analogous to metallic granular systems. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1369151
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  • 3
    Electronic Resource
    Electronic Resource
    Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1240-1242 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report electrical spin injection from a ferromagnetic metal contact into a semiconductor light emitting diode structure with an injection efficiency of 30% which persists to room temperature. The Schottky barrier formed at the Fe/AlGaAs interface provides a natural tunnel barrier for injection of spin polarized electrons under reverse bias. These carriers radiatively recombine, emitting circularly polarized light, and the quantum selection rules relating the optical and carrier spin polarizations provide a quantitative, model-independent measure of injection efficiency. This demonstrates that spin injecting contacts can be formed using a widely employed contact methodology, providing a ready pathway for the integration of spin transport into semiconductor processing technology. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1449530
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Nonvolatile reprogrammable logic elements using hybrid resonant tunneling diode–giant magnetoresistance circuits (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1190-1192 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have combined resonant interband tunneling diodes (RITDs) with giant magnetoresistance (GMR) elements so that the GMR element controls the switching current and stable operating voltage points of the hybrid circuit. Parallel and series combinations demonstrate continuous or two-state tunability of the subsequent RITD-like current–voltage characteristic via the magnetic field response of the GMR element. Monostable–bistable transition logic element operation is demonstrated with a GMR/RITD circuit in both the dc limit and clocked operation. The output of such hybrid circuits is nonvolatile, reprogrammable, and multivalued. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1395523
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    Paper (German National Licenses)
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