Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
52 (1988), S. 1670-1671
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The effect of heat treatment on the minority-carrier surface recombination velocity in hydrogen-passivated polycrystalline silicon samples has been studied in the temperature range 350–500 °C using the electron-beam-induced current mode of a scanning electron microscope. Minority-carrier trap center densities, calculated from the minority-carrier surface recombination velocity data, varying from 8×1012 to 1.2×1012 cm−2 have been measured. A finite decrease in the minority-carrier trap center density indicates that hydrogen atoms diffuse to the surface from the bulk of the hydrogenated samples. The activation energy of hydrogen diffusion in silicon is found to be 0.53±0.04 eV.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.99053
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