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  • 1
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe a horizontally focusing curved-crystal monochromator that invokes a 4-point bending scheme and a liquid-metal cooling bath. The device has been designed for dispersive diffraction and spectroscopy in the 5–20 keV range, with a predicted focal spot size of ≤100 μm. To minimize thermal distortions and thermal equilibration time, the 355×32×0.8 mm crystal will be nearly half submerged in a bath of Ga-In-Sn-Zn alloy. The liquid metal thermally couples the crystal to the water-cooled Cu frame, while permitting the required crystal bending. Calculated thermal profiles and anticipated focusing properties are discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 2200-2202 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Cryogenically cooled, single-crystal silicon, x-ray monochromators offer much better thermal performance than room-temperature silicon monochromators. The improved performance can be quantified by a figure-of-merit equal to the ratio of the thermal conductivity to the coefficient of thermal expansion. This ratio increases by about a factor of 50 as the temperature is decreased from 300 to 100 K. An extensive thermal and structural finite element analysis is presented for an inclined, liquid-nitrogen-cooled, Si monochromator crystal diffracting 4.2 keV photons from the [111] planes using undulator A at the Advanced Photon Source. The angular size of the beam accepted on the crystal was chosen to be 50 μrad vertically and 120 μrad horizontally. The deflection parameter, K, was 2.17 for all cases. The peak power density at normal incidence to the beam was calculated to be 139 W/mm2, and the total power was 750 W at a distance of 30 m from the source for a positron current of 100 mA. The crystal was oriented in the inclined geometry with an inclination angle of 85° for all cases. The performance of the crystal was investigated for beam currents of 100, 200, and 300 mA. The calculated peak slopes of the diffraction plane over the extent of the beam footprint were −1.17, −2.35, and 0.33 μrad, and the peak temperatures were 88.2, 102.6, and 121.4 K, respectively. The variation in the Bragg angle due to change in d spacing across the beam footprint was less than 1 μrad for all cases. These results indicate that a properly designed, cryogenically cooled, inclined silicon monochromator can deliver the full brilliance of undulator A at even the highest machine currents. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3354-3354 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The results of an experimental study of the contact heat conductance across a single diamond crystal interface with OFHC copper (Cu) are reported. Gallium-indium (GaIn) eutectic was used as an interstitial material. Contact conductance data are important in the design and the prediction of the performance of x-ray optics under high-heat-load conditions. Two sets of experiments were carried out. In one, the copper surface in contact with diamond was polished and then electroless plated with 1 μm of nickel, while in the other, the copper contact surface was left as machined. The measured average interface heat conductances are 44.7±8 W/cm2-K for nonplated copper and 23.0±8 W/cm2-K for nickel-plated copper. For reference, the thermal contact conductances at a copper-copper interface (without diamond) were also measured, and the results are reported. A typical diamond monochromator, 0.2 mm thick, will absorb about 44 W under a standard undulator beam at the Advanced Photon Source. The measured conductance for nickel-plated copper suggests that the temperature drop across the interface of diamond and nickel-plated copper, with a 20 mm 2 contact area, will be about 10°C. Therefore temperature rises are rather modest, and the accuracy of the measured contact conductances presented here are sufficient for design purposes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The performance of two Si crystal x-ray monochromators internally cooled with liquid nitrogen was tested on the F2-wiggler beamline at the Cornell High Energy Synchrotron Source (CHESS). Both crystals were (111)-oriented blocks of rectangular cross section having identical dimensions. Seven 6.4-mm-diameter coolant channels were drilled through the crystals along the beam direction. In one of the crystals, porous Cu mesh inserts were bonded into the channels to enhance the heat transfer. The channels of the second crystal were left as drilled. Symmetric, double-crystal rocking curves were recorded simultaneously for both the first and third order reflections at 8 and 24 keV. The power load on the cooled crystal was adjusted by varying the horizontal beam size using slits. The measured Si(333) rocking curve of the unenhanced crystal at 24 keV at low power was 1.9 arcsec FWHM. The theoretical width is 0.63 arcsec. The difference is due to residual fabrication and mounting strain. For a maximum incident power of 601 W and an average power density of about 10 W/mm2, the rocking curve was 2.7 arcsec. The rocking curve width for the enhanced crystal at low power was 2.4 arcsec. At a maximum incident power of 1803 W and an average power density of about 19 W/mm2, the rocking curve width was 2.2 arcsec FWHM. The use of porous mesh augmentation is a simple, but very effective, means to improve the performance of cryogenically cooled Si monochromators exposed to high power x-ray beams. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Nuclear Instruments and Methods in Physics Research Section A: 347 (1994), S. 128-133 
    ISSN: 0168-9002
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 69 (1992), S. 492-502 
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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