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  • 1
    Electronic Resource
    Electronic Resource
    The airglow
    Amsterdam : Elsevier
    Vistas in Astronomy 2 (1956), S. 929-939 
    Details
    ISSN: 0083-6656
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0083-6656(56)90017-4
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  • 2
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing: An efficient means to reveal chromium profiles in Si after diffusion and gettering (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 611-613 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The combined use of rapid thermal annealing and deep level transient spectroscopy is described as an efficient means to reveal chromium profiles in silicon wafer after various thermal treatments. The proposed method has been successfully applied to observe the depletion of chromium atoms at the near-surface region of intentionally contaminated Czochralski-grown silicon reslting from a conventional three-step gettering cycle.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100894
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  • 3
    Electronic Resource
    Electronic Resource
    Growth and structure of rapid thermal silicon oxides and nitroxides studied by spectroellipsometry and Auger electron spectroscopy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5242-5248 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid thermal oxidation of Czochralski-grown silicon in either O2 or N2O atmospheres have been studied using spectroellipsometry and Auger electron spectroscopy. Multiwavelength ellipsometric data were processed in order to separately derive the thicknesses and refractive indexes of rapid thermal dielectrics. Results revealed a significant increase of the mean refractive index as the film thickness falls below 20 nm for both O2 or N2O oxidant species. A multilayer structure including an about 0.3-nm-thick interfacial region of either SiOx or nitroxide in the case of O2 and N2O growth, respectively, followed by a densified SiO2 layer, was found to accurately fit the experimental data. The interfacial region together with the densified state of SiO2 close to the interface suggest a dielectric structure in agreement with the continuous random network model proposed for classical thermal oxides. Auger electron spectroscopy analysis confirmed the presence of noncrystalline Si—Si bonds in the interfacial region, mostly in the case of thin oxides grown in O2. It was speculated that the initial fast growth regime was due to a transient oxygen supersaturation in the interfacial region. Besides, the self-limiting growth in N2O was confirmed and explained in agreement with several recently published data, by the early formation of a very thin nitride or oxynitride membrane in the highly densified oxide beneath the interface. The beneficial effect of direct nitrogen incorporation by rapid thermal oxidation in N2O instead of O2 for the electrical behavior of metal-oxide-semiconductor capacitors is likely a better SiO2/Si lattice accommodation through the reduction of stresses and Si—Si bonds in the interfacial region of the dielectric.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357174
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  • 4
    Electronic Resource
    Electronic Resource
    Charged particle activation analysis study of the oxygen outdiffusion from Czochralski-grown silicon during classical and rapid thermal annealing in various gas ambient (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6115-6119 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxygen outdiffusion from Czochralski silicon has been studied under various atmospheres, such as oxygen, nitrogen, and argon/hydrogen (10%). The enhancement of the oxygen diffusion coefficient by hydrogen has been confirmed. Besides, thermal treatments in a halogen lamp furnace has led to a 100-fold higher oxygen diffusion coefficient under a neutral atmosphere, and to a 1000-fold enhancement under a hydrogenated atmosphere. Moreover, in this latter case, a level at 6.5×1017 atoms cm−3 in the oxygen profile has been observed at the surface of the sample. Electron-hole pair generation under intense ultraviolet radiation eventually combined with the presence of hydrogen is likely responsible for the anomalously high oxygen diffusion during rapid thermal processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355174
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  • 5
    Electronic Resource
    Electronic Resource
    Influence of rapid thermal annealing and internal gettering on Czochralski-grown silicon. I. Oxygen precipitation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2707-2711 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of rapid thermal annealing at 1200 °C as a pretreatment on the precipitation of oxygen during a three-step internal gettering process is studied thanks to infrared analyses. The influence of both the duration and the ambient of this pretreatment is considered. We define a limit duration of the rapid thermal annealing from which the further precipitation is greatly enhanced through a precipitation path leading to the formation of quasispherical precipitates different from the platelets. It is also shown that hydrogen introduced during the rapid thermal anneal delays the oxygen precipitation during the internal gettering process. Finally, considering the inefficiency of the internal gettering of chromium after a rapid thermal annealing at 1200 °C under argon/hydrogen, a new interpretation is proposed: a rapid thermal annealing would produce a modification in the oxygen precipitation path, leading to the formation of precipitates which would not be suitable for an efficient gettering effect. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361141
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  • 6
    Electronic Resource
    Electronic Resource
    Carrier compensation induced by rapid thermal annealing in undoped InP (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 648-650 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The region beneath the interface of an InGaAs layer grown onto an undoped InP substrate by molecular beam epitaxy was investigated before and after rapid thermal annealing. Capacitance-voltage measurements revealed a depletion region in the underlying InP due to donor compensation that is mainly caused by the Fe-related Ec−0.63 eV-deep level observed by deep level transient spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355807
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  • 7
    Electronic Resource
    Electronic Resource
    Hole trap level generation in silicon during rapid thermal annealing: Influence of substrate type and process conditions (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3320-3324 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hole trap level generation in boron-doped silicon by rapid thermal annealing between 900 and 1100 °C has been studied using deep level transient spectroscopy, with emphasis on the effects of substrate type and process parameters. A dominant hole trap level at Ev+0.30 eV and two accompanying hole trap levels at Ev+0.22 eV and Ev+0.40 eV in lower concentrations have been systematically detected in Czochralski, float zone, and epitaxial substrates, in a less than 5-μm-thick surface layer. The defect state concentrations were observed to increase monotonically with both the annealing temperature and the cooling rate. Higher concentrations of hole trap levels were measured in the Czochralski and epitaxial substrates than in the float zone substrate. Finally, both a silicidation and an oxidation reaction during the high-temperature plateau totally inhibited the formation of defect states. We suggest that the defect centers responsible for the observed hole trap levels could be formed during the high-temperature plateau with the participation of dissolved as-grown impurities and metal contaminants diffused from the wafer surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350952
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  • 8
    Electronic Resource
    Electronic Resource
    Thermal conductivity of thick meso-porous silicon layers by micro-Raman scattering (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6841-6846 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report here a theoretical model describing specific mechanisms of heat transport in as-prepared and oxidized meso-porous silicon layers. The model is in good agreement with experimental measurements performed by micro-Raman scattering on the layers surface. For the first time, thermal conductivity inhomogeneity along the porous layer thickness of 100 μm is studied. Direct correlation between the thermal conductivity and morphology variations along the layer thickness is brought to the fore. A new approach to estimate local porosity of the porous layers based on thermal conductivity and Si nanocrystallite size measurements is also proposed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371760
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  • 9
    Electronic Resource
    Electronic Resource
    Measurement of porous silicon thermal conductivity by micro-Raman scattering (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4700-4702 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a noncontact and nondestructive method to measure thermal conductivity in layered materials using micro-Raman scattering. This method was successfully applied to monocrystalline silicon whose thermal conductivity was found to be 63 W/m K at about 550 °C and then applied to porous silicon layers. For a 50 μm thick layer with 50% porosity, we found a thermal conductivity of 1 W/m K confirming the thermal insulating properties of this material. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371424
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  • 10
    Electronic Resource
    Electronic Resource
    A deep level transient spectroscopy study of electron traps in n-type GaAs after pulsed electron beam irradiation (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2742-2745 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical and deep level transient spectroscopy measurements on Schottky barriers were performed in order to characterize electrically active defects in n-type GaAs (Bridgman substrates or liquid-phase epitaxial layers) after pulsed electron beam annealing. Both surface damage and bulk defects were observed in the Bridgman substrates depending on the pulse energy density. No electron traps were detected in the liquid-phase epitaxial layers before and after annealing for an energy density of 0.4 J/cm2. The existence of an interfacial insulating layer at the metal-semiconductor interface, associated with As out-diffusion during the pulsed electron irradiation, was revealed by the abnormally high values of the Schottky barrier diffusion potential. Moreover, two new electron traps with activation energy of 0.35 and 0.43 eV, called EP1 and EP2, were introduced in the Bridgman substrates after pulsed electron beam annealing. The presence of these traps, related to the As evaporation, was tentatively attributed to the decrease of the EL2 electron trap signal after 0.4-J/cm2 annealing. It is proposed that these new defects states are due to the decomposition of the AsGa-Asi complex recently considered as the most probable defect configuration for the dominant EL2 electron trap usually detected in as-grown GaAs substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339401
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