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  • 1
    Electronic Resource
    Electronic Resource
    Charged particle activation analysis study of the oxygen outdiffusion from Czochralski-grown silicon during classical and rapid thermal annealing in various gas ambient (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6115-6119 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxygen outdiffusion from Czochralski silicon has been studied under various atmospheres, such as oxygen, nitrogen, and argon/hydrogen (10%). The enhancement of the oxygen diffusion coefficient by hydrogen has been confirmed. Besides, thermal treatments in a halogen lamp furnace has led to a 100-fold higher oxygen diffusion coefficient under a neutral atmosphere, and to a 1000-fold enhancement under a hydrogenated atmosphere. Moreover, in this latter case, a level at 6.5×1017 atoms cm−3 in the oxygen profile has been observed at the surface of the sample. Electron-hole pair generation under intense ultraviolet radiation eventually combined with the presence of hydrogen is likely responsible for the anomalously high oxygen diffusion during rapid thermal processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355174
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of rapid thermal annealing and internal gettering on Czochralski-grown silicon. I. Oxygen precipitation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2707-2711 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of rapid thermal annealing at 1200 °C as a pretreatment on the precipitation of oxygen during a three-step internal gettering process is studied thanks to infrared analyses. The influence of both the duration and the ambient of this pretreatment is considered. We define a limit duration of the rapid thermal annealing from which the further precipitation is greatly enhanced through a precipitation path leading to the formation of quasispherical precipitates different from the platelets. It is also shown that hydrogen introduced during the rapid thermal anneal delays the oxygen precipitation during the internal gettering process. Finally, considering the inefficiency of the internal gettering of chromium after a rapid thermal annealing at 1200 °C under argon/hydrogen, a new interpretation is proposed: a rapid thermal annealing would produce a modification in the oxygen precipitation path, leading to the formation of precipitates which would not be suitable for an efficient gettering effect. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361141
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Influence of rapid thermal annealing and internal gettering on Czochralski-grown silicon. II. Light beam induced current study of recombination centers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2712-2716 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results concerning the generation of recombination centers induced by rapid thermal annealing and by the combination of this heat pulse with an internal gettering process are reported. The influence of both the duration and the ambient of the rapid thermal annealing is studied by measurements of the minority-carrier diffusion length. This work shows that (i) a short heat pulse at high temperature is sufficient to induce a strong degradation of this diffusion length. The activation of the pre-existing impurities and a modification of the intrinsic defect population during the annealing may occur, (ii) the rapid thermal annealing has still an influence on the generation of recombination centers after thermal treatments at high temperature and for long durations. Indeed, this memory effect is observed even after the internal process, as observed in a previous work for the oxygen precipitation. However, we conclude that the recombination centers generated cannot be totally correlated with the oxygen precipitation. Introducing hydrogen during the RTA shows that the nature of defects responsible for the modification of the minority carrier diffusion length and oxygen precipitation must be different. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361142
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    Paper (German National Licenses)
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