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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 53-64 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A secondary ion mass spectrometer (SIMS) has been developed for the surface analysis of chemically complex samples. The instrument has an ion transmission efficiency of 12% and an abundance sensitivity of better than 107 at 500 mass resolution. A computer system has been developed to acquire, store, and process images with up to 1024×1024 pixel resolution. Complex SIMS spectra were resolved using either high-resolution (30 000) mass analysis (HRMS) or mass spectrometry/mass spectrometry (MS/MS). Ion images of insulators or conductors were obtained with approximately 2000 A(ring) resolution. Surface studies of electronic devices and chemical sensors are presented. SIMS–MS/MS analysis was used to identify contaminants on the surface of a failed pressure sensor. The MS/MS analysis of secondary ions minimized interferences and facilitated identification of molecular species.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This comment summarizes the historical development of a new high-spatial and high-mass resolution SIMS instrument developed in our laboratories. Reference is given to the lack of published material on similar developments which may have taken place in other laboratories.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Vacuum 34 (1984), S. 103-106 
    ISSN: 0042-207X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Vacuum 17 (1967), S. 329-330 
    ISSN: 0042-207X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 7 (1972), S. 404-412 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Topographies of silica glass surfaces developed by 20 keV Ar+ irradiation contain features which are not adequately explained by considering only the variation of sputtering yield with the ion-incidence angle. These features are sharply defined and could lead to serious misinterpretation of specimen structures when sputter-erosion is used as a microscopic sectioning technique. Three mechanisms are discussed which together could account for the observed discrepancies, the first being ion-reflection at grazing incidence, the second the phenomenon of forward-peaked emission of high-energy secondary particles under irradiation at high angles of incidence and the third being re-deposition of sputtered material onto closely adjacent planes. A general expression is derived for this latter mechanism for a cosine spatial distribution of sputtered particles.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 7 (1972), S. 404-412 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Topographies of silica glass surfaces developed by 20 keV Ar+ irradiation contain features which are not adequately explained by considering only the variation of sputtering yield with the ion-incidence angle. These features are sharply defined and could lead to serious misinterpretation of specimen structures when sputter-erosion is used as a microscopic sectioning technique. Three mechanisms are discussed which together could account for the observed discrepancies, the first being ion-reflection at grazing incidence, the second the phenomenon of forward-peaked emission of high-energy secondary particles under irradiation at high angles of incidence and the third being re-deposition of sputtered material onto closely adjacent planes. A general expression is derived for this latter mechanism for a cosine spatial distribution of sputtered particles.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 21 (1994), S. 414-417 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Sputtered neutral mass spectrometry (SNMS) with ionization by low-energy electron beam offers several analytical advantages that complement the capabilities of the major surface analysis techniques: XPS, AES and SIMS. These include easy operation on insulator specimens, reduced influence of topography or sample tilt, low spread of elemental relative sensitivity factors (RSFs) across the periodic table, near-constant RSFs in different matrices and hence quantification from 100% down to trace concentrations, ppm detection limits, microprobe operation for depth profiling and submicron imaging and depth resolutions as for SIMS (≥1 nm). In addition to these analytical performances, the equipment shares much in common with quadrupole SIMS facilities and, as with that technique, is easily integrated into multitechnique instruments.This paper compares performances of SNMS and SIMS on the same samples and presents some imaging and useful yield data from a close-coupled ionizer, which is a new development on the 410 SIMSLAB. Comparisons are also made between, SIMS, SNMS and AES.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
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