ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
FTIR spectra reported by Brandt et al. [Solid State Commun. 81, 307 (1992)], Tischler et al. [Appl. Phys. Lett. 60, 639 (1992)], and Tsai et al. [Appl. Phys. Lett. 59, 2814 (1991), and 60, 1700 (1992)] have shown the presence of Si-H and Si-H2 lines in porous Si which Canham [Appl. Phys. Lett. 57, 1046 (1990)], Tischler and Tsai have considered essential to the observation of visible photoluminescence (PL). Hydrogen has been ascribed as a surface passivating agent which eliminates nonradiative transitions thus enabling PL to occur. Photo-oxidation has been described as replacing some of the surface passivants with oxygen, generating nonradiative transitions which quench the PL. We have markedly reduced the Si-H and Si-H2 content of anodized samples by treatment with CCl4 vapor. Comparison of the photoluminescent emission and excitation spectra for CCl4 treated and untreated samples show very similar results. Comparison of the FTIR spectra of photo-oxidized samples which exhibit no PL and as-anodized samples show the similar presence of Si-H and Si-H2. These observations suggest that neither Si-H nor Si-H2 is essential for the observation of PL in anodized Si. This result and the similarity in the behavior of porous Si with the polysilynes lead us to concur with Brandt et al. that visible PL in anodized Si is generated by the backbone of a 2D Si polymer.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.108754
Permalink
