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  • 1
    Electronic Resource
    Electronic Resource
    The Ag photodoping mechanism in As2S3 (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5135-5137 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the number of photons/cm2 over the energy range 1.95 to 3.35 eV, required to form a negative-relief image in 2000 A(ring) films of As2S3 using 100 A(ring) films of evaporated Ag, Ag2Te, Ag2Se, and AgBr. We have observed sensitivity below the band gap of As2S3 in all cases. We have observed an increase in sensitivity by several orders of magnitude with increase of photon energy between 1.95 and 3.35 eV. The sensitivity decreases from Ag to the semimetals Ag2Te and Ag2Se to the wide band gap AgBr by the ratio 1:50:2500 at 2.4 eV. Assuming an internal photoemission model as proposed by Goldschmidt and Rudman, we extract barrier heights of 1.71, 2.10, 2.22 and 2.42 eV for Ag, Ag2Te, Ag2Se, and AgBr.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354301
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  • 2
    Electronic Resource
    Electronic Resource
    The Ag/As2S3 photodoping mechanism: Photon absorption (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2768-2770 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The sensitivity of the Ag-photodoping process has been measured as a function of photon energy between 1.9 and 6.4 eV. The sensitivity increases with increasing photon energy except at 3.8 eV (325 nm) where Ag exhibits an anomalous window. At this energy there is an abrupt and large decrease of sensitivity. In a second measurement, the transmission as a function of wavelength between 200 and 900 nm of a 2000-A(ring)-thick film of As2S3 doped with an imaging dose of Ag and a second sample doped with a larger than imaging dose are compared with an undoped sample. Band-gap shrinkage is different for the two doses. Both measurements suggest that under certain conditions, photon absorption in the Ag-photodoping process occurs in the Ag.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354646
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Role of Si-H and Si-H2 in the photoluminescence of porous Si (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1099-1101 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: FTIR spectra reported by Brandt et al. [Solid State Commun. 81, 307 (1992)], Tischler et al. [Appl. Phys. Lett. 60, 639 (1992)], and Tsai et al. [Appl. Phys. Lett. 59, 2814 (1991), and 60, 1700 (1992)] have shown the presence of Si-H and Si-H2 lines in porous Si which Canham [Appl. Phys. Lett. 57, 1046 (1990)], Tischler and Tsai have considered essential to the observation of visible photoluminescence (PL). Hydrogen has been ascribed as a surface passivating agent which eliminates nonradiative transitions thus enabling PL to occur. Photo-oxidation has been described as replacing some of the surface passivants with oxygen, generating nonradiative transitions which quench the PL. We have markedly reduced the Si-H and Si-H2 content of anodized samples by treatment with CCl4 vapor. Comparison of the photoluminescent emission and excitation spectra for CCl4 treated and untreated samples show very similar results. Comparison of the FTIR spectra of photo-oxidized samples which exhibit no PL and as-anodized samples show the similar presence of Si-H and Si-H2. These observations suggest that neither Si-H nor Si-H2 is essential for the observation of PL in anodized Si. This result and the similarity in the behavior of porous Si with the polysilynes lead us to concur with Brandt et al. that visible PL in anodized Si is generated by the backbone of a 2D Si polymer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108754
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    Paper (German National Licenses)
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