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  • 1
    Electronic Resource
    Electronic Resource
    H, He, and N implant isolation of n-type GaN (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3008-3011 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of ion-implantation-induced damage on the resistivity of n-type GaN has been investigated. H, He, and N ions were studied. The resistivity as a function of temperature, implant concentration, and post-implant annealing temperature has been examined. Helium implantation produced material with an as-implanted resistivity of 1010 Ω-cm. He-implanted material remained highly resistive after an 800 °C furnace anneal. The damage associated with H implantation had a significant anneal stage at 250 °C and the details of the as-implanted resistivity were sample dependent. N implants had to be annealed at 400 °C to optimize the resulting resistivity but were then thermally stable to over 800 °C. The 300 °C resistivity of thermally stabilized He- and N- implanted layers was 104 Ω-cm, whereas for H-implanted layers the 300 °C resistivity was less than 10 Ω-cm. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360712
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  • 2
    Electronic Resource
    Electronic Resource
    Gain enhancement in InAlAs/InGaAs heterojunction bipolar transistors using an emitter ledge (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1954-1955 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Improved gain was observed at low currents when a thin emitter ledge was incorporated into npn In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistors. A 40-nm-thick n-In0.52Al0.48As emitter ledge resulted in over four times higher gain at low biases due to reduced surface recombination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357654
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  • 3
    Electronic Resource
    Electronic Resource
    Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2843-2852 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the spectral and intensity dependences of the optically-induced reversal of current collapse in a GaN metal-semiconductor field-effect transistor (MESFET) have been compared to calculated results. The model assumes a net transfer of charge from the conducting channel to trapping states in the high-resistivity region of the device. The reversal, a light-induced increase in the trap-limited drain current, results from the photoionization of trapped carriers and their return to the channel under the influence of the built-in electric field associated with the trapped charge distribution. For a MESFET in which two distinct trapping centers have been spectrally resolved, the experimentally measured dependence upon light intensity was fitted using this model. The two traps were found to have very different photoionization cross-sections but comparable concentrations (4×1011 cm−2 and 6×1011 cm−2), suggesting that both traps contribute comparably to the observed current collapse.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287127
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  • 4
    Electronic Resource
    Electronic Resource
    Correlation between nucleation layer structure, dislocation density, and electrical resistivity for GaN films grown on a-plane sapphire by metalorganic vapor phase epitaxy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4322-4324 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy has been used to study AlN nucleation layers (NLs) grown using metalorganic vapor phase epitaxy, in order to link the resistivity of unintentionally doped GaN films to NL microstructure. We observed that high-resistivity (HR) GaN films grew on large-grained NLs, which, in turn, grew on smooth sapphire surfaces. These HR films had a higher density of edge dislocations than screw and mixed dislocations. Low-resistivity GaN films were found to grow on fine-grained NLs that grew on rougher sapphire surfaces. These LR films had a density of edge dislocations close to the combined density of screw and mixed dislocations. The LR films in this study were also found to have a buried conductive layer that is detectable using capacitance–voltage measurements. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1428769
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  • 5
    Electronic Resource
    Electronic Resource
    Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3527-3529 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The two deep traps responsible for current collapse in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy have been studied by photoionization spectroscopy. Varying the growth pressure of the high resistivity GaN buffer layer results in a change in the deep trap incorporation that is reflected in the observed current collapse. Variations in the measured trap concentrations with growth pressure and carbon incorporation indicate that the deepest trap is a carbon-related defect, while the mid-gap trap may be associated with grain boundaries or dislocations. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1418452
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  • 6
    Electronic Resource
    Electronic Resource
    Growth and properties of scandium epitaxial films on GaN (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3248-3250 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial scandium films have been grown on c-axis-oriented wurtzite GaN. The films are highly ordered, adherent, and reflective. For substrate temperatures in the range 640–780 °C an interfacial reaction yields a ScN layer whose thickness increases with temperature, consistent with Sc diffusion as the rate limiting step. Electrical contacts fabricated from the Sc/ScN/GaN films exhibit a 1.0 eV barrier height on n-type GaN. The Sc films, which represent a class of ductile materials, may constitute a compliant substrate for overgrowth of GaN. © 1996 American Institute of Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116563
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  • 7
    Electronic Resource
    Electronic Resource
    Persistent photoconductivity in n-type GaN (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1092-1094 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Persistent photoconductivity has been observed in n-type GaN:Si. The effect is seen at room temperature in both nonoptimally grown films as well as in device quality channel layers. The relaxation dynamics are found to agree with a stretched exponential model of recovery. A comparison between different samples, based upon stretched exponential parameters, Hall measurements, and photoluminescence data is made. The data suggest that the cause of persistent photoconductivity is the same among the different samples and that there is a transition in the relaxation dynamics between room temperature and 130 °C. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119924
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  • 8
    Electronic Resource
    Electronic Resource
    Observation of deep traps responsible for current collapse in GaN metal–semiconductor field-effect transistors (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 4016-4018 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep traps responsible for current collapse phenomena in GaN metal–semiconductor field-effect transistors have been detected using a spectroscopic technique that employs the optical reversibility of current collapse to determine the photoionization spectra of the traps involved. In the n-channel device investigated, the two electron traps observed were found to be very deep and strongly coupled to the lattice. Photoionization thresholds for these traps were determined at 1.8 and at 2.85 eV. Both also appear to be the same traps recently associated with persistent photoconductivity effects in GaN. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125523
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