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  • 1
    Electronic Resource
    Electronic Resource
    Photocurrents at the mercury-solution interface
    Amsterdam : Elsevier
    Journal of Electroanalytical Chemistry 25 (1970), S. 107-119 
    Details
    ISSN: 0368-1874
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0368-1874(70)89074-8
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  • 2
    Electronic Resource
    Electronic Resource
    Neutron diffraction study of the electrochemical passivation of nickel powder
    Amsterdam : Elsevier
    Journal of Electroanalytical Chemistry 101 (1979), S. 133-135 
    Details
    ISSN: 0368-1874
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0368-1874(79)87097-5
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  • 3
    Electronic Resource
    Electronic Resource
    Small-angle x-ray scattering study of anodically oxidized porous silicon layers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 780-784 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Small-angle x-ray scattering was used to investigate the microstructural change induced by electrochemical oxidation of porous silicon (PS) layers. It is shown that when the oxidation level increases, the size of the crystalline Si domains, which constitute the PS layer, decreases. This size reduction is correlated to the blue-shift observed in the photoluminescence spectra when the oxidation level is increased. Moreover, we found that a "fuzzy'' surface appears between pores (voids) and matter when the samples are electrochemically oxidized. This interface is found very sharp for the as-prepared and nonoxidized PS layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356454
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  • 4
    Electronic Resource
    Electronic Resource
    X-ray small-angle scattering analysis of porous silicon layers (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 625-628 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A small-angle x-ray scattering study of porous layers prepared on lightly doped and heavily doped silicon wafers reveals strong differences according to the dopant type. The p-type silicon layers show a roughness between matter and voids below a space-correlation length of about 10 nm and a fractal dimension of aggregates for a length scale higher than 25 nm. The lightly doped n-type is different: the scattering curve obeys the Porod law according to the rod-like structure of the pores. However, the structure of the heavily doped p+ sample is more complicated and not yet well understood.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343528
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  • 5
    Electronic Resource
    Electronic Resource
    The kinetics and mechanism of oxide layer formation from porous silicon formed on p-Si substrates (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1042-1048 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of oxide layers from porous silicon layers formed on P substrates which present different and well-controlled porous textures is studied in detail. It is shown that the overall process leading to oxides with properties similar to standard thermal oxides consists of two steps: the oxidation of silicon in the porous layer and the densification of silica. The first step does not depend upon the initial texture of the layer, but is mostly determined by the porosity of the sample and the temperature of the oxidation sequence. The second step, oxide densification, which takes place at temperatures higher than 1000 °C, is very sensitive to the porous texture of the layer, the densification times increasing sharply with the average pore size. The densification process has a high activation energy, which can be related to the activation energy for the viscous flow of silica.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339761
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  • 6
    Electronic Resource
    Electronic Resource
    Application of porous silicon formation selectivity to impurity profiling in p-type silicon substrates (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3814-3819 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new type of application of porous silicon formation is proposed, which does not deal with the material properties, but with the characteristics of the involved electrochemical silicon dissolution reaction. The anodization potential of p-type silicon in concentrated hydrofluoric acid under galvanostatic conditions has been shown to be characteristic of the silicon doping concentration at the interface and independent of the porous silicon-layer thickness. This close correlation between potential and doping level is used to determine concentration profiles of p-type implanted dopants. During anodization of silicon presenting dopant concentration variations, the anodization potential varies according to silicon doping concentration. The potential values can be converted to dopant concentration, and the electrolysis time scale to a depth scale, leading then to the doping impurity profile. This method, which is used as well for deep and shallow diffused impurities, exhibits a very good agreement with spreading resistance measurement and secondary-ion mass spectrometry analysis. Simultaneous anodization of regions of different doping concentration has also been investigated. It allows the characterization of the porous silicon formation selectivity by a selectivity coefficient, which is measured on a large range of silicon doping concentration. The selectivity is found to be strongly dependent on the doping level: it is nearly infinite for samples presenting highly doped regions (greater than 3×1018 cm−3), but decreases sharply when the doping concentration is below 1018 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344044
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  • 7
    Electronic Resource
    Electronic Resource
    Stress in oxidized porous silicon layers (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 439-441 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stress was determined in oxidized porous silicon layers using x-ray diffraction to measure the substrate curvature. Stress is always compressive and its magnitude depends on oxide quality. The maximum value is reached when the oxide obtained from porous silicon is densified by a high-temperature process and is equivalent to standard thermal silicon dioxide. The stress magnitude decreases when oxide porosity increases. An increase in layer thickness is always observed when oxidation conditions lead to a porous oxide or when the initial porosity of the layer is lower than 56%, due to volumic expansion of silica relative to silicon, otherwise the thickness decreases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337036
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  • 8
    Electronic Resource
    Electronic Resource
    Characterization of photoluminescent porous Si by small-angle scattering of x rays (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2625-2627 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A microstructural study of high-porosity porous silicon layers formed on lightly P-doped wafers has been performed by x-ray small-angle scattering (SAXS) using the powerful and parallel beam of the synchrotron radiation. When the porosity of the sample is increased from 55% to 85% there is a continuous modification in the shape of the scattering profiles. The silicon skeleton mass fractal dimension decreases continuously. For porosity around 85%, the value for which the sample starts to display a strong photoluminescence at room temperature, there is a large increase in the pore size. The scattering profiles are characteristic of an isotropic three-dimensional structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106901
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  • 9
    Electronic Resource
    Electronic Resource
    Electroluminescence in the visible range during anodic oxidation of porous silicon films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 304-306 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Porous silicon/silicon structures under anodic oxidation conditions give rise to an electroluminescence phenomenon in the visible range. Using an optical multichannel analyzer the spectral distribution of the emitted light was measured−in situ−during the anodic oxidation step. Recorded spectra show a maximum which shifts continuously from red-orange at the beginning of the process towards the yellow range. The visible emission well above the band gap of bulk silicon is attributed to a quantum size effect in the very small size (5–20 A(ring)) silicon island which constitutes the porous silicon skeleton. The light emission is interrupted when the current flow stops due to the formation of a continuous oxide layer at the porous silicon/silicon interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105578
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  • 10
    Electronic Resource
    Electronic Resource
    Porous silicon: The material and its applications in silicon-on-insulator technologies
    Amsterdam : Elsevier
    Applied Surface Science 41-42 (1989), S. 604-613 
    Details
    ISSN: 0169-4332
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0169-4332(89)90130-X
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