Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    An investigation of point defects in silicon carbide (1995)
    Springer
    Applied physics 61 (1995), S. 55-58 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 61.70; 68.55; 78.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  Positron lifetime measurements on bulk samples of single crystal SiC wafers have shown that both 6H and 4H polytypes exhibit a bulk lifetime of 150±2 ps. All samples contained a second, defect-related lifetime component, ranging in value from 250 to about 300 ps with rather low intensities. The defect structure exhibited by the nanocrystalline samples is, not unexpectedly, much more complex. Positron beam experiments on Electron Cyclotron Resonance Chemical Vapour Deposited (ECR-CVD) SiC thin films showed that the positrons are very sensitive to changes in important film parameters as a function of the deposition conditions. It was found that the film density is lower than expected, probably due to hydrogen incorporation; variations in composition among different films were detected through variations in the S parameters, and differences were observed in the electric field at the film–substrate interface due to hydrogen passivation of dangling bonds and different substrate resistivities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538211
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Variational method for two-electron atoms (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 5129-5131 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The ground-state energies for helium-like atoms are computed by the Ritz variational method. The trial wave function is chosen to be of the form ψ=[ln(r12+e)+C(r1−r2)2] ×exp[−S(r1+r2)], where r1 and r2 are the distances of the electrons from the nucleus, r12 the distance between the electrons, e the natural base of logarithms, and the parameters C and S are determined by minimizing the energy of the atom. The numerical results are presented and compared with those of other authors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.457611
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    In-situ monitoring of electron cyclotron resonance plasma chemical vapour deposition of hydrogenated silicon nitride films
    Amsterdam : Elsevier
    Surface & Coatings Technology 59 (1993), S. 77-81 
    Details
    ISSN: 0257-8972
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0257-8972(93)90057-U
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    CuInSe2 thin films by d.c. and pulse-plated electrodeposition (1990)
    Springer
    Journal of materials science 1 (1990), S. 123-128 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract CuInSe2 thin films were prepared by electrodeposition from aqueous solution, containing CuSO4, InCl3 and SeO2 under d.c. step pulse-voltage on d.c., and pulse-plating conditions. The films were characterized by scanning electron microscopy, energy dispersive spectrometry and X-ray diffraction. The influence of deposition technique on film composition, morphology and structure were studied. Heat treatment of pulse-plated films under vacuum resulted in the formation of CuInSe2 with single-phase chalcopyrite structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00694730
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    An investigation of point defects in silicon carbide (1995)
    Springer
    Applied physics 61 (1995), S. 55-58 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 68.55 ; 78.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Positron lifetime measurement on bulk samples of single crystal SiC wafers have shown that both 6H and 4H polytypes exhibit a bulk lifetime of 150±2ps. All samples contained a second, defect-related lifetime component, ranging in value from 250 to about 300 ps with rather low intensities. The defect structure exhibited by the nanocrystalline samples is, not unexpectedly, much more complex. Positron beam experiments on Electron Cyclotron Resonance Chemical Vapour Deposited (ECR-CVD) SiC thin films showed that the positrons are very sensitive to changes in important film parameters as a function of the deposition conditions. It was found that the film density is lower than expected, probably due to hydrogen incorporation; variations in compositions among different films were detected through variations in theS parameters, and differences were observed in the electric field at the film-substrate interface due to hydrogen passivation of dangling bonds and different substrate resistivities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538211
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...