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  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence of GaN: Effect of electron irradiation (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2968-2970 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of electron irradiation on the optical properties of GaN material with various electrical conductivity (i.e., n type, compensated, and p type) is studied in detail by photoluminescence (PL) spectroscopy. Electron irradiation with a dose 〈1017 cm−2 is found to have a minor effect on photoluminescence, indicating a high radiation resistance of GaN. For higher doses, two major effects of electron irradiation on PL properties can be distinguished, i.e., radiation-induced quenching of the PL, likely caused by a radiation-induced formation of competing recombination channels, and radiation-induced formation/activation of new optically active centers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122646
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence of defects induced in silicon by SF6/O2 reactive-ion etching (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3348-3352 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) studies of SF6/O2 plasma-induced defect formation in n-type silicon samples are reported. Ion bombardment of the silicon surface during the SF6 reactive-ion etching (RIE) is shown to introduce defects giving rise to a broad PL band in the 0.70–1.00 eV spectral range and to the carbon-related C and G lines. The role of oxygen during SF6/O2 RIE on the photoluminescence observed is analyzed. It is argued that oxygen contamination enhances the formation of PL centers via the creation of extended defects, such as oxygen precipitates. A lattice contraction nearby these extended defects is suggested to be responsible for the observed splitting of the C and G lines as well as the shift of the phosphorous bound exciton line detected after SF6/O2 RIE. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360711
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  • 3
    Electronic Resource
    Electronic Resource
    Symmetry of optically active Yb-related centers in InP and In1−xGaxP (x≤0.13) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1180-1183 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The symmetry of Yb3+-related luminescent centers in InP and In1−xGaxP layers with alloy composition less than x=0.13 is studied using polarized excitation spectroscopy. An induced polarized luminescence under above gap excitation is detected and is explained in terms of an excitation mechanism involving 4f→5d shell electron transitions. It is shown that the Yb3+-related centers responsible for 1.220–1.237 eV luminescence are optically anisotropic with C3v symmetry or its subgroup. The effect of alloy composition on the symmetry of Yb centers is analyzed in terms of the Yb3+-GaIn defect model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357843
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  • 4
    Electronic Resource
    Electronic Resource
    Structural properties of a GaNxP1−x alloy: Raman studies (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3959-3961 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman measurements in backscattering configuration are employed to characterize the effect of nitrogen on the structural properties of a GaNxP1−x alloy with x≤3%. The following effects of N incorporation on the vibrational spectra of GaNP are observed. First, frequencies of GaP-like and GaN-like longitudinal optical phonons exhibit strong compositional dependence, due to a combined effect of alloying and biaxial strain. Second, a dramatic quenching of two-phonon Raman scattering and an emergence of zone-edge GaP-like vibrations are observed. These effects are tentatively attributed to a local distortion of the GaNP lattice and/or compositional disorder in the alloy. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1380244
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of growth temperature on photoluminescence of GaNAs/GaAs quantum well structures (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3781-3783 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of growth temperature on the optical properties of GaAs/GaNxAs1−x quantum wells is studied in detail using photoluminescence (PL) spectroscopies. An increase in growth temperature up to 580 °C is shown to improve the optical quality of the structures, while still allowing one to achieve high (〉3%) N incorporation. This conclusion is based on: (i) an observed increase in intensity of the GaNAs-related near-band-edge emission; (ii) a reduction in band-edge potential fluctuations, deduced from the analysis of the PL line shape; and (iii) a decrease in concentration of some extended defects detected under resonant excitation of the GaNAs. The thermal quenching of the GaNAs-related PL emission, however, is almost independent of the growth temperature and is attributed to a thermal activation of an efficient nonradiative recombination channel located in the GaNAs layers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125454
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  • 6
    Electronic Resource
    Electronic Resource
    Formation of nonradiative defects in molecular beam epitaxial GaNxAs1−x studied by optically detected magnetic resonance (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3089-3091 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of two nonradiative defects (i.e., an AsGa-related complex and an unknown deep-level defect with g=2.03) in GaNxAs1−x epilayers and GaAs/GaNxAs1−x multiple-quantum-well structures, grown by molecular beam epitaxy, is studied by the optically detected magnetic resonance technique. It is shown that contributions by these defects in competing carrier recombination strongly vary with the nitrogen composition. An increase in the growth temperature or postgrowth rapid thermal annealing significantly reduces the influence of the nonradiative defects studied, and is accompanied by a remarkable improvement in the optical properties of the structures. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1416155
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  • 7
    Electronic Resource
    Electronic Resource
    Direct determination of electron effective mass in GaNAs/GaAs quantum wells (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1843-1845 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron effective mass (me*) in GaNxAs1−x/GaAs quantum wells (QWs) is investigated by the optically detected cyclotron resonance technique. The me* values of 0.12m0 and 0.19m0 are directly determined for the 70-Å-thick QWs with N composition of 1.2% and 2.0%, respectively. This sizable increase in the electron effective mass is consistent with the earlier theoretical predictions based on the strong interaction of the lowest conduction band states with the upper lying band states or impurity band induced by the incorporation of N. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1311324
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  • 8
    Electronic Resource
    Electronic Resource
    Thermal stability and doping efficiency of intrinsic modulation doping in InP-based structures (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1733-1735 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Doping efficiency and thermal stability of intrinsic modulation doping in InP/InGaAs heterostructures, where intrinsic defects (PIn antisites) are used as an electron source, are investigated. A high efficiency of the intrinsic doping is demonstrated from a comparison between the intrinsically doped and conventional extrinsically doped structures. The thermal stability of the intrinsically doped heterostructures is shown to be largely affected by the thermal stability of the InP surface. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124802
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  • 9
    Electronic Resource
    Electronic Resource
    Time-resolved studies of photoluminescence in GaNxP1−x alloys: Evidence for indirect-direct band gap crossover (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 52-54 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time resolved photoluminescence spectroscopy is employed to monitor the effect of N incorporation on the band structure of GaNP alloys. Abrupt shortening in radiative lifetime of near-band gap emissions, arising from excitonic radiative recombination within N-related centers, is found to occur at very low N compositions of around 0.5%, i.e., within the same range as the appearance of the direct-band gap-like transitions in the photomodulated transmission spectra of GaNP reported previously. The effect has been attributed to an enhancement in oscillator strength of optical transitions due to band crossover from indirect to direct-band gap of the alloy. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1491286
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  • 10
    Electronic Resource
    Electronic Resource
    Radiative recombination mechanism in GaNxP1−x alloys (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1740-1742 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Based on the results of temperature-dependent photoluminescence (PL) and absorption measurements, the PL emission in GaNP epilayers and GaNP/GaP multiple quantum well structures with N composition up to 4% is shown to be dominated by optical transitions within deep states likely related to N clusters. With increasing N composition, these states are shown to become resonant with conduction band of the alloy and thus optically inactive, leading to the apparent redshift of the PL maximum position. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1455144
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