ZIB

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Photoluminescence of defects induced in silicon by SF6/O2 reactive-ion etching (1995)

Buyanova, I. A. ; Henry, A. ; Monemar, B. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 78 (1995), S. 3348-3352

add to mindlist on the mindlist

Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Photoluminescence (PL) studies of SF6/O2 plasma-induced defect formation in n-type silicon samples are reported. Ion bombardment of the silicon surface during the SF6 reactive-ion etching (RIE) is shown to introduce defects giving rise to a broad PL band in the 0.70–1.00 eV spectral range and to the carbon-related C and G lines. The role of oxygen during SF6/O2 RIE on the photoluminescence observed is analyzed. It is argued that oxygen contamination enhances the formation of PL centers via the creation of extended defects, such as oxygen precipitates. A lattice contraction nearby these extended defects is suggested to be responsible for the observed splitting of the C and G lines as well as the shift of the phosphorous bound exciton line detected after SF6/O2 RIE. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.360711

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit