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  • 1
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 77 (1973), S. 2634-2640 
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie , Physik
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 77 (1973), S. 2640-2645 
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie , Physik
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    Biochemistry 18 (1979), S. 457-460 
    ISSN: 1520-4995
    Quelle: ACS Legacy Archives
    Thema: Biologie , Chemie und Pharmazie
    Materialart: Digitale Medien
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  • 4
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: Quasioptical grid array technologies can provide low cost, wide bandwidth sources supplying 100–500 mW power levels needed for reflectometric and electron cyclotron imaging of fusion plasmas. Broadband quasioptical overmoded waveguide frequency multiplier grid array systems have been designed, simulated, fabricated, and are under test with a goal of providing Watt level output powers from 50 to 200 GHz. Both 1×8, one-dimensional and 4×4, two-dimensional phased antenna arrays utilizing Schottky varactor loaded transmission lines have been designed, simulated, fabricated, and are being tested. Microelectromechanical systems have been designed and fabricated on silicon wafers with traditional integrated circuit processing techniques, resulting in devices with physical dimensions on the order of a few tens of microns. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7483-7487 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: X-ray photoelectron spectroscopy (XPS) examines only a thin surface layer (〈5 nm) that may not be representative of the bulk. We separated the information from the surface and bulk by using laser-deposited superconducting films that have nearly atomically flat surfaces for which quantitative analysis formalisms exist. The chemical compositions of high Tc (90 K) and high Jc (〉106 A/cm2) Y-Ba-Cu-O films on SrTiO3 (001) substrates were examined. From the relative intensities of the surface and bulk components of the Ba(3d) and Ba(4d) spectra taken at different take-off angles and different escape depths [using Al Kα (1486.6 eV) and Mg Kα (1253.6 eV) excitations], we have determined the nonsuperconducting surface layer thickness to be 1 nm and the layer composition to be BaCuO2. The surface layer thickness for a superconducting film only 8 nm thick was also 1 nm. By detecting the substrate Ti signal through this film, and ruling out a high density pinholes, we provide evidence that the XPS data contain information from the superconducting phase. A polycrystalline pellet scraped in vacuum had a surface layer only 0.4 nm thick. Since typical photoelectron escape depths are about 2 nm, about 80% of the detected signal originates in the bulk. The surface layer contains Cu2+ and oxygen with a photoelectron binding energy of 531 eV.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3386-3391 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Attenuated total reflection is commonly used to excite the surface plasma wave (SPW) on a metal film. The SPW traveling on the surface of the metal will enhance the emission of photoelectrons from the metal into the semiconducting region of a Schottky barrier photodiode. A model consisting of an aluminum film on n-type gallium arsenide forming a Schottky barrier photodiode is used to predict the enhanced emission of photoelectrons over the barrier between the aluminum film and the gallium arsenide. The quantum efficiency for this model shows a strong dependence on parameters such as the electron escape depth, film thickness, and the spacer thickness between the prism coupler and the photodiode. The model proved to be effective when used to fit quantum efficiency and reflectivity data resulting from an angle scan experiment.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4878-4885 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A model that explains the doping mechanism in Bi(Pb)-Sr-Ca-Cu-O superconductor is presented. X-ray microanalysis reveals that the excess oxygen can be accounted for by the exact stoichiometry of the n=2 and 3 phases. We show that the presence of excess oxygen associated with the structural modulation in the compound is not sufficient to explain the hole concentration required by the transition temperature observed. Using a bond valence argument, we show that the effective valence of the Bi ion in the BiO bilayers is smaller than the expected value of +3, due to the incomplete oxygen coordination around the Bi ion. The model qualitatively explains the observations of lowering of Tc with Er (or Tm) doping or oxygen annealing. The role of Pb addition is suggested to be one of altering the thermodynamics and kinetics of formation of the n=3 phase.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3017-3022 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Reactively sputtered tantalum nitride (Ta2N) has been investigated as a diffusion barrier between Pd2Si and aluminum and CoSi2 and Al. Ta2N is found to be an excellent matallurgical diffusion barrier for the two systems up to 555 °C, with no intermixing observed in Rutherford backscattering and Auger electron spectroscopic studies. Schottky barrier devices n-Si/Pd2Si/Ta2N/Al were excellent and showed no deterioration after annealing at 500 °C. However, similar devices with CoSi2 contacts and Ta2N barrier showed a creation of high contact resistance between the silicide and the as-deposited nitride.
    Materialart: Digitale Medien
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  • 9
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Superconducting thin films of Y1Ba2Cu3Ox with superconducting transition temperature (Tc) near 90 K have been prepared by a laser deposition technique. We show that films prepared on sapphire, lithium niobate, and strontium titanate under identical processing conditions exhibit different electrical characteristics. The film surfaces, interfaces, and crystallinity have been studied by a number of analytical techniques. We conclude that the substrate influences the film properties primarily in three ways: the thermal expansion mismatch introduces cracks in the film, the interface reaction changes the film composition, and the substrate lattice influences the crystallographic orientation of the film.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3755-3762 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The reactions of metals with GaAs are substantially more complex than comparable metal-silicon systems. In this paper, phase formation in the Co-GaAs system is examined in detail and contrasted with other metal-GaAs and metal-silicon systems. Both elemental and microstructural characterization techniques are used, and the limitations of each are discussed. Cobalt begins to react with GaAs at 375 °C and initially forms a ternary phase of approximate composition, Co2GaAs. Subsequent reactions or higher-temperature annealing results in the formation of binary phases CoGa and CoAs. The observed phase formation is controlled by the species with the largest diffusion coefficient, and this species is determined by the temperature. At sufficiently high annealing temperatures, arsenic is lost from the surface, and an epitaxial CoGa phase is formed on the GaAs.
    Materialart: Digitale Medien
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