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  • 1
    Electronic Resource
    Electronic Resource
    InAs quantum boxes: Highly efficient radiative traps for light emitting devices on Si (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3123-3125 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have compared by photoluminescence (PL) the radiative quantum efficiencies η of an array of InAs/GaAs quantum boxes (QBs) obtained by self-organized growth and of a single high quality InGaAs quantum well (QW). On GaAs substrates, η is essentially the same for both structures. A growth on a commercial GaAs-on-Si substrate entails drastic quenching of the integrated PL intensity and shortening of the carrier lifetime τ for the InGaAs QW, whereas both τ and η are not modified for the QB array. The efficient carrier capture by InAs QBs, combined with the localized nature of QB excitons hinders in this case the carrier diffusion toward dislocations. These superior properties of QBs on Si, which are observed over a wide range of excitation powers and for temperatures up to 300 K, opens a novel route toward efficient and reliable light emitters on Si. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115798
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  • 2
    Electronic Resource
    Electronic Resource
    Relativistic calculation of the electronic structure of the IF molecule (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 6426-6438 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The electronic structure of IF is investigated using ab initio pseudopotentials and a variational/perturbative MRCI scheme (CIPSI/CIPSO). All the valence states dissociating into neutral asymptotes I(2P1/2,2P3/2)+F(2P1/2,2P3/2) and ionic asymptotes I+(3P2,3P1,3P0,1D2,1S0) +F−(1S0) are determined up to the region where they undergo avoided crossing with the neutral excited states dissociating into I*+F. The spectroscopic properties are derived and discussed in comparison with the available experimental results, with emphasis on the X, B, E, A, β, A′, and D′ states. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.472996
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  • 3
    Electronic Resource
    Electronic Resource
    «Self-organized» InAs/GaAs quantum dots (1995)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1285-1293 
    Details
    ISSN: 0392-6737
    Keywords: Localized single-particle electronic states (excluding impurities) ; Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary We discuss some specific properties of self-organized InAs-GaAs quantum dots grown by Molecular Beam Epitaxy. We report on the optical spectra obtained under resonant excitation, where both a Raman contribution and a resonant emission of the dots are evidenced. We show that the emission of single dots can easily be isolated by processing measas on samples with a graded indium content, and finally discuss the temporal and temperature behaviour of the emission.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457200
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