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  • 1
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy Section 43 (1987), S. 849-851 
    ISSN: 0584-8539
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2442-2444 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The direct band energy (Eg) and donor–acceptor (D,A) transition energies are mapped as a function of temperature for Be-doped GaAsSb lattice matched to InP. Photoluminescence (PL) measurements over the temperature range 2 K≤T≤300 K yield two emission peaks, one of lower intensity and one of higher intensity. The lower intensity peak is believed to be Be related, while the higher intensity peak is from residual impurities. The emission energies of both PL peaks increase linearly with respect to the logarithm of excitation intensity, indicating the peaks are (D,A) transitions. Measurement of Eg was achieved using optical absorption spectroscopy over the range 14 K≤T≤300 K. A least squares fit of the absorption data using the Varshni equation produces a closed form expression for Eg(T) with coefficients α=13.5×10−4 eV/K, and β=135 K. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 699-709 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Beryllium ion implantation was used to form high acceptor concentrations in GaAs1−xSbx (0.47≤x≤0.49) epilayers on semi-insulating InP substrates. Two implant doses were tested: Q0=5×1014 cm−2 and Q0=1×1015 cm−2 at an implant energy of E=50 keV. Electrochemical profiling and secondary-ion-mass spectrometry (SIMS) results confirm acceptor concentrations of NA≥1×1019 cm−3 and NA≥2×1019 cm−3 within 1000 A(ring) of the GaAs1−xSbx surface for the lower and higher implant dose, respectively. These results provide a p+ surface layer for low-resistance ohmic contact to GaAsSb-based devices. Optical microscopy and SIMS demonstrate rapid thermal anneal (RTA) temperature limits of T=650 °C for Q0=5×1014 cm−2 and T=600 °C for Q0=1 ×1015 cm−2. The temperature limitation is imposed by destabilization of the GaAs1−xSbx surface through Ga sputtering during implantation, and Ga and As outdiffusion during RTA. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8316-8319 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The metalorganic vapor phase epitaxial growth of GaAs has been investigated using trimethylgallium (TMGa) or triethylgallium (TEGa) and elemental arsenic (As) in hydrogen under atmospheric and reduced pressures. The important process parameters include the substrate temperature and the composition and flow rate of the reaction mixture. Device quality GaAs films have been grown at substrate temperatures of 450 °C or higher using TEGa and As, as compared with 510 °C or higher required by the TEGa-arsine process. The GaAs films deposited from TEGa and As are n-type, and the Hall mobilities in GaAs films deposited at 490 °C with a net electron concentration of 5×1015 cm−3 were 7000 and 23 000 cm2/V s at 300 and 77 K, respectively. The carbon concentration estimated from the 4.2 K photoluminescence measurements and the Hall mobility data is on the order of 5×1015 cm−3. Epitaxial GaAs films have also been grown from TMGa and As at 600 °C. These films are always p-type with room temperature net carrier concentration of 1015 cm−3 and higher and have higher carbon concentrations. Thus, the use of elemental arsenic for epitaxial growth of GaAs provides a cost-effective technology for many, particularly large area, GaAs devices.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Crystal Growth 32 (1976), S. 279-286 
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Colloid & polymer science 255 (1977), S. 196-196 
    ISSN: 1435-1536
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Colloid & polymer science 254 (1976), S. 932-932 
    ISSN: 1435-1536
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Colloid & polymer science 254 (1976), S. 933-933 
    ISSN: 1435-1536
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1420-9071
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary PHA-activated lymphocytes release colony-stimulating activity (CSA) for macrophage-granulocyte precursor cells (colony forming units, CFUC) in the culture medium. Somatostatin, known to interfer with ribosomal protein synthesis, was demonstrated to reduce the release of CSA from PHA-treated mouse spleen lymphocytes.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Weinheim [u.a.] : Wiley-Blackwell
    Materials and Corrosion/Werkstoffe und Korrosion 20 (1969), S. 125-126 
    ISSN: 0947-5117
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Description / Table of Contents: The chemical equilibria encountered with the chromium-plating of steelIn order to determine the equilibrium conditions, the authors investigated, in the compound system Fe(s) + CrJ2(g) ⇌ Cr(s) + FeJ2(g) used for diffusion-type chromium plating, the two stages Cr(s)+ 2J(g) ⇌ CrJ2(g) and Fe(s) + 2J(g) ⇌ FeJ2(g) which determine the reaction rate. The former stage was investigated at a temperature range of 700 to 1160° C, the latter at 760 to 1080° C. In this temperature range, the equilibrium is shifted somewhat to the left, the shift increasing with higher temperatures. However, as the general correlation of the equilibrium constants with temperature is low, it may be assumed that chromium-plating could be carried out over a much wider temperature range than is usual at present.
    Notes: Für die Ermittlung der Gleichgewichts-beziehungen wurden in dem für die Diffusionsverchromung verwendeten Verbindungs-system Fe(f) + CrJ2(g) ⇌ Cr(f) + FeJ(g) die beiden geschwindigkeitsbestim-menden Schritte Cr(f)+ 2 J(g) ⇌ CrJ2,(g) und Fe(f) + 2 J(g) ⇌ FeJ2(g) untersucht, und zwar die erste bei 700-1100, die zweite bei 760 und 1080° C. Das Gleichgewicht ist im untersuchten Temperaturbereich etwas nach links verschoben, und zwar um so stärker, je höher die Temperatur ist. Die insgesamt geringe Temperaturabhängigkeit der Gleichgewichtskonstanten läßt jedoch vermuten, daß die Inchromierung in einem weit breiteren Temperaturbereich geführt werden kann als es bisher in der Praxis geschieht.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
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