ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report a physical analysis of the reverse leakage currents observed in titanium silicided n+/p junctions fabricated using rapid thermal processing. By studying the dependence of currents on temperature, bias voltage, and diode geometry, we have been able to identify the leakage mechanisms. A defect level at Ev+0.30 eV, detected in concentrations (approximately-greater-than)1014 cm−3, is shown to be responsible for a low leakage current component, through a generation-recombination mechanism. Silicide asperities protruding through the metallurgical junction are proposed to account for the tunneling nature of a second, high leakage, distribution of currents.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.104336
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