ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In this study, ferroelectric thin films of Ba(Zr0.1Ti0.9)O3 were successfully deposited onPt/Ti/SiO2/Si substrate under the optimal rf magnetron sputtering parameters, and their electrical andferroelectric characteristics were investigated. The MFMIS structure of Al/Ba(Zr0.1Ti0.9)O3/Pt/Ti/SiO2/Si was proposed in order to be applied as NDRO FRAM applications. From theexperimental results obtained, the dielectric constant and the leakage current density of BZT filmswere about 200 and 1×10-9A/cm2, respectively, under the electrical field of 1 MV/cm. Besides, thesaturation polarization and coercive field of Ba(Zr0.1Ti0.9)O3 films were found to be 4 μC/cm2 and 25kV/cm, respectively, as the frequency of 103 Hz was applied. The variations of saturation polarizationand coercive filed of films under various frequencies ranging form 102 to 106 Hz were also discussed
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/53/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.336-338.73.pdf
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