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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 6911-6915 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have investigated the energetics of chlorine adsorption on the GaAs(110) surface using first principles plane-wave pseudopotential calculations. Both spin-polarized and spin-compensated calculations were performed for a set of eight different configurations of adsorbed chlorine atoms. We find that spin polarization plays an important role in the energetics of adsorption, particularly when we compare chlorine adatom binding energies for configurations with different numbers of "half-filled" dangling bonds. Our calculations show that scanning tunneling microscopy data of chlorine adatom configurations, with observations of islands at lower temperatures and chains at higher temperatures, can be understood in terms of the energetics. Previous calculations, which did not include spin-polarization effects, were not able to provide a definitive conclusion on these observations. From the energetics of the various configurations studied, we can extract a set of effective lateral interaction parameters between chlorine atoms adsorbed on GaAs(110). However, analysis of this set of parameters shows that the range of the effective lateral interactions probably extends to larger distances than the unit cells used in our calculations. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 107 (1997), S. 3295-3299 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Both Si9H12 and Si15H16 cluster models for the Si(100) surface were studied using the Hartree–Fock molecular-orbital method and density functional theory. Our investigation shows that the ground state of the Si(100) surface consists of buckled dimers, contrary to the results of a number of previous embedded cluster calculations, but in agreement with some recent slab calculations. The relaxation constraints used in previous embedded cluster studies probably do not model the relaxation of the Si(100) surface layers adequately. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 107 (1997), S. 5914-5917 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: On the GaAs(110) surface steps perpendicular to the [001] direction may be either arsenic-terminated or gallium-terminated. We compute the energy difference between these steps using a tight-binding recursion method. We find that the arsenic-terminated step is more stable by approximately 0.5 eV. Our results suggest that some recent experimental observations on the shape of islands formed during homoepitaxy on GaAs(110) may be the consequence of an energy-driven rather than a kinetics-driven epitaxial growth. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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