Electronic Resource
College Park, Md.
:
American Institute of Physics (AIP)
The Journal of Chemical Physics
107 (1997), S. 5914-5917
ISSN:
1089-7690
Source:
AIP Digital Archive
Topics:
Physics
,
Chemistry and Pharmacology
Notes:
On the GaAs(110) surface steps perpendicular to the [001] direction may be either arsenic-terminated or gallium-terminated. We compute the energy difference between these steps using a tight-binding recursion method. We find that the arsenic-terminated step is more stable by approximately 0.5 eV. Our results suggest that some recent experimental observations on the shape of islands formed during homoepitaxy on GaAs(110) may be the consequence of an energy-driven rather than a kinetics-driven epitaxial growth. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.475158
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