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  • 1
    Book
    Book
    Hoboken, N.J :Wiley,
    Title: Physics of photonic devices /
    Author: Chuang, Shun Lien
    Edition: 2nd ed
    Publisher: Hoboken, N.J :Wiley,
    Year of publication: 2009
    Pages: XVII, 821 S. : , graph. Darst.
    Series Statement: Wiley series in pure and applied optics
    ISBN: 978-0-470-29319-5
    Type of Medium: Book
    Language: English
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 287-289 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical gain of wurtzite InxGa1−xN/In0.02Ga0.98N and GaN/AlxGa1−xN quantum well (QW) lasers taking into account many-body effects is investigated. The valence band structures are calculated as a function of strain and well thickness. The inclusion of compressive strain shows better lasing performance because of the increase of the subband energy separation in the valence band. Our theoretical gain spectra of In0.15Ga0.85N/In0.02Ga0.98N QW lasers are in good agreement with measured ones reported by Nakamura, IEEE J. Sel. Top. Quantum Electron. 3, 712 (1997). It is also shown that there is a universal relation governing the dependence of the band-gap renormalization on the two-dimensional carrier density for GaN-based QW lasers as there is for the infrared III-V systems. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2489-2497 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the effects of the spin-orbit (SO) split-off band coupling with the heavy- and the light-hole bands on the band structure, density of states, dipole moment, and the linear and nonlinear optical gains of strained-layer quantum wells by comparing the 6×6 and the 4×4 Luttinger–Kohn models. First, a unitary transformation is found that block diagonalizes the 6×6 Hamiltonian into two 3×3 blocks that are real symmetric in the finite difference formulation. We find that the peak gains are overestimated, especially in the case of a tensile quantum well, in the 4×4 model, for the InGaAs–InP quantum-well systems which show weak SO coupling. The change of the density of states is suggested to be the dominant factor for the discrepancy of the results between the 6×6 and the 4×4 models in the linear gain. For nonlinear gain the discrepancy between the two models is smaller than that of the linear gain because the change of the fourth-order dipole moment in the nonlinear gain compensates that of the density of states. We also considered InGaP–In(AlGa)P quantum wells which have very narrow SO split-off energy. In this case, because of the strong coupling between the SO bands and the hole bands, the InGaP–In(AlGa)P quantum-well systems show more complicated behavior. The peak gain of strained quantum well is overestimated in the low carrier injection region and is underestimated in the high injection, in the 4×4 model. On the other hand, the peak gain of an unstrained quantum well is overestimated in the 4×4 model over the wide range of carrier densities. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5554-5561 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a self-consistent model for the band structure and optical gain spectrum of GaAs1−xSbx/GaAs quantum-well (QW) lasers with carrier population. Experimental data indicate that this material system has a type-II QW configuration. By fitting the experimental photoluminescence data from various groups using our proposed empirical model, which assumes that 90% of the band-gap bowing parameter (1.2 eV) appears in the valence band, we find that the unstrained valence band edge discontinuity ratio Qv0 is close to 0.9 for an arbitrary Sb mole composition x of GaAs1−xSbx/GaAs QWs and the QW structure becomes type-II when the compressive strain induced band-edge shifts are taken into account. We show that for type-II QWs the self-consistent solution, which solves the Schrödinger equation and Poisson equation simultaneously, is necessary. Due to the free-carrier screening effect in the self-consistent potential, the electrons are attracted toward the barrier–well interfaces by the holes in the wells, and, therefore, sufficient gain can be achieved for lasing action with type-II QWs. Our theoretical results are compared with experimental data of laser operation wavelength and modal gain, with reasonable agreement. Our model will be important for modeling of type-II QW lasers and useful for design of GaAsSb/GaAs QW vertical-cavity surface-emitting lasers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 353-364 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic properties of (001)-, (111)-oriented zinc-blende and (0001)-oriented wurtzite crystals are investigated theoretically, where the spontaneous polarization and piezoelectric (PZ) field effects are taken into account. We show that the Luttinger–Kohn 6×6 Hamiltonians for the valence bands of the zinc-blende crystals written in the wurtzite bases for (001) and (111) crystal orientations and the Hamiltonian for the (0001)-orientation of wurtzite crystals can all be block diagonalized to two 3×3 Hamiltonians, which have analytical solutions for eigenvalues and eigenvectors. We then derive analytical expressions for the strain dependent band-edge effective masses and interband optical matrix elements of zinc-blende and wurtzite GaN crystals and compare their numerical results as well as valence band structures. Although the compressively strained zinc-blende quantum wells in materials such as GaAs- and ZnSe-based systems show reduced threshold carrier densities due to the lower in-plane effective mass, we find that for GaN the reduction of the effective mass with the biaxial compressive strain is not significant in both zinc-blende and wurtzite structures. An alternative method is the application of a uniaxial strain to reduce the in-plane effective masses in both structures. It is also found that the valence band structures and the overlap integral of the electron and hole wave functions of GaN/AlGaN quantum-well structures are affected significantly by the PZ field for (111) zinc-blende structures and by both the spontaneous polarization and PZ fields for (0001) wurtzite structures. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3686-3688 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a detailed theoretical study on the optical and L–I characteristics of implant-apertured index-guided vertical-cavity surface-emitting lasers. Our theory is based on a beam propagation method combined with thermal, gain, and rate-equation models. Spatial hole burning and modal competition are taken into account. Our results are in excellent agreement with the experimental data and show the effect of the current aperture size (determined by the ion implant) on the modal performance of these devices. In particular, the current-aperture size can be fixed independently from the index-guide size to obtain minimum threshold, single-mode operation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2007-2016 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An efficient matrix formulation combining a discrete Bessel transform and a beam propagation method for the modeling of vertical-cavity surface-emitting lasers is presented. Devices with circular symmetry are considered. The theory generalizes the concepts of field reflection and transmission coefficients, and generates a round-trip matrix that characterizes the entire structure. The model yields, among other things, the threshold current and intensity distribution at threshold and higher-order mode profiles. We apply the model to the threshold analysis of a gain-guided device. Our theoretical results agree very well with experimental observations on the temperature-dependent threshold characteristics. The optical modal reflection behavior of distributed Bragg reflectors based on our discrete Bessel transform approach is also analyzed and compared to other models. The importance of coupling loss for devices with oxide confinement layers is also discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3103-3105 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The piezoelectric effects on the optical gain of wurtzite GaN/AlGaN QW lasers taking into account the many-body effects are presented. The self-consistent model with piezoelectric field effect shows that band structures and optical gain are significantly affected by the piezoelectric field at relatively low carrier densities. The peak gain is redshifted and smaller when compared to the flat-band model without piezoelectric field effect. Only gain peaks corresponding to C1-HH1 and C1-LH1 transitions are observed in the investigated range and transitions for C1-HH2 and C1-LH2 are negligible due to the large subband energy spacing at low carrier densities and small matrix elements at high carrier densities. At high carrier densities, the self-consistent model shows band structures and optical properties similar to the flat-band model due to the screening effects. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3482-3484 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallographic orientation dependence of the far-infrared (FIR) light generated at the (001) surface of a zincblende semiconductor is shown to derive principally from bulk difference-frequency mixing. A strong modulation is observed for 1-GW/cm2 pulses on InP, which demonstrates that the radiated FIR wave produced by bulk optical rectification is comparable to that generated by the transport of photoinjected carriers. Using the bulk rectification light as a clock, we show that more than 95% of the light produced from an InP (111) crystal by 100-fs, 100-μJ pulses is generated in a time shorter than the excitation pulse.
    Type of Medium: Electronic Resource
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