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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 2487-2492 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have theoretically studied the lifetime of the protecting layer in an ac plasma display panel (ac-PDP) under various discharge gas conditions. The sputtering of the protecting layer by energetic plasma particles is one of the most important elements limiting the lifetime of ac-PDPs. Because of its importance in the lifetime of ac-PDPs, the sputtering yields of the MgO protecting layer by various ions are investigated as a function of their kinetic energies. We calculate the energy distribution of ions bombarding the protecting layer and perform simulations for the discharge characteristics of ac-PDPs under various gas conditions in order to estimate the lifetime of ac-PDPs. By comparing the lifetime for various gas conditions, we can also optimize the gas mixture and pressure to achieve an extended lifetime of the protecting layer. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2489-2497 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the effects of the spin-orbit (SO) split-off band coupling with the heavy- and the light-hole bands on the band structure, density of states, dipole moment, and the linear and nonlinear optical gains of strained-layer quantum wells by comparing the 6×6 and the 4×4 Luttinger–Kohn models. First, a unitary transformation is found that block diagonalizes the 6×6 Hamiltonian into two 3×3 blocks that are real symmetric in the finite difference formulation. We find that the peak gains are overestimated, especially in the case of a tensile quantum well, in the 4×4 model, for the InGaAs–InP quantum-well systems which show weak SO coupling. The change of the density of states is suggested to be the dominant factor for the discrepancy of the results between the 6×6 and the 4×4 models in the linear gain. For nonlinear gain the discrepancy between the two models is smaller than that of the linear gain because the change of the fourth-order dipole moment in the nonlinear gain compensates that of the density of states. We also considered InGaP–In(AlGa)P quantum wells which have very narrow SO split-off energy. In this case, because of the strong coupling between the SO bands and the hole bands, the InGaP–In(AlGa)P quantum-well systems show more complicated behavior. The peak gain of strained quantum well is overestimated in the low carrier injection region and is underestimated in the high injection, in the 4×4 model. On the other hand, the peak gain of an unstrained quantum well is overestimated in the 4×4 model over the wide range of carrier densities. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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