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  • 1
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 261 (1976), S. 689-690 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] It was somewhat surprising, therefore, while investigating the effect of line and field scanning directions on the legibility of alphanumeric television displays with luminances which were higher than normal, to find that the flicker was more visible when the field was scanned from left to right ...
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2057-2059 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of an investigation to grow thin Si films on Si substrates at low substrate temperatures using ionized SiH4 gas generated with a Kaufman type ion gun. This investigation shows island-growth at higher substrate temperatures (500–700 °C) in the form of square-based pyramids. By lowering the substrate temperature to 300 °C, we were able to achieve a planar growth with a growth rate of 8 A(ring) per minute. Transmission electron microscopy (TEM) is used to study the crystalline quality of the samples prepared at different temperatures. The study by high resolution TEM of the sample grown at 300 °C indicates the presence of microtwins in the Si epi-layer. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 46 (1990), S. 587-591 
    ISSN: 1600-5740
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 52 (1996), S. 1851-1853 
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 238 (1972), S. 228-228 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The suggested lack of skill is borne out by the experience of those who watch cricket only rarely. The delay in the click of bat hitting ball always comes as a slight surprise. With reference to even larger distances, many people do not realize that the flash of lightning and the crack of thunder ...
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 2 (1983), S. 123-128 
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 22 (1987), S. 4504-4513 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Transmission electron microscopy has been used to study the growth mechanism of silicon in modified aluminium-silicon eutectic alloys. In agreement with earlier studies a high density of thin {1 1 1 } faults was observed in silicon modified by relatively large amounts of sodium or strontium. High-resolution microscopy showed that these faults were a mixture of thin twins and stacking faults, the inter-fault spacing being at least ten times the twin width. Because modified silicon is thought to grow by the twin re-entrant edge mechanism, the thin twins were examined in relation to the shape of the modified silicon dendrites and the solidified growth interfaces. It was concluded that the thin faults were not deformation twins resulting from either thermal contraction stresses or mechanical grinding during specimen preparation. No direct evidence was found to support the re-entrant edge mode of growth in modified silicon. Instead it is suggested that the interface may appear macroscopically non-faceted, as in the more general Lateral Microscopic Growth mechanisms.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Journal of Applied Polymer Science 12 (1968), S. 2359-2370 
    ISSN: 0021-8995
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The solubility parameters of sixteen polymers have been determined by the turbidimetric titration method. The results agree well with the reported values obtained from swelling and viscosity measurements. The method is sensitive to the choice of nonsolvents and to small changes in the copolymer composition.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
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