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  • 1
    Electronic Resource
    Electronic Resource
    Effect of the oxidation of TiN on the stability of the Al/TiN interface (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 188-195 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stability of TiN barriers deposited between Si or SiO2 substrates and AlSiCu metallic alloy contacts was investigated as a function of the sintering temperature and of the application of an oxidation step to the barrier. It was found that Al penetrates the barrier during the sintering at 450 °C for 1 h, which also results in the diffusion of Ti inside the Al alloy. This mutual interdiffusion increases with temperature but when oxygen is present at the barrier surface, the intensity of diffusion processes decreases considerably. It is also established that the barrier remains more stable on SiO2 than on the Si substrate. It is suggested that the better reaction resistance of oxidized TiN compared with oxygen-free nitride may be due to the blocking of fast-diffusion paths of Al diffusion by oxygen and subsequently the formation of Al2O3, AlN, and TiAl3 phases during sintering. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362804
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  • 2
    Electronic Resource
    Electronic Resource
    The effect of an oxygen plasma exposure on the reliability of a Ti/TiN contact metallization (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4438-4443 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article demonstrates that the exposure of a TiN barrier to an ex situ oxygen plasma results in a more stable TiN/AlSiCu interface up to temperatures of 600 °C as shown by the time-of-flight elastic recoil detection measurements. A quaternary phase diagram of the Al–Ti–O–N system was calculated in the range of temperatures between 450 and 550 °C and suggests that the stabilization of the TiN/AlSiCu interface is possible since oxidized TiN reacts with Al to form AlN, TiAl3 and Al2O3 at the interface. A Ti/TiN/(oxygen plasma exposure)/AlSiCu/TiN contact metallization in 1.2-μm-diam and 1.4-μm-deep straight wall contacts to 0.2-μm-deep N+ and P+ diffusions, to gate polysilicon as well as to capacitor polysilicon shows stable electrical results even after a [(450 °C, 60 min)+(500 °C, 60 min)+(550 °C, 60 min)] combined thermal stress. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361753
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  • 3
    Electronic Resource
    Electronic Resource
    Giant magnetoimpedance effect in soft and ultrasoft magnetic fibers : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5136-5138 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Soft NiFe-Permalloy fibers and ultrasoft NiCo-based amorphous fibers, having a circular cross section with 30–40 μm in diameter, have been cast by melt extraction. The fibers have been driven by a sinusoidal current with 20 mApp constant amplitude and frequencies from 0.1 to 100 MHz. Both longitudinal and transverse giant magnetoimpedance effects have been observed in these fibers. The longitudinal GMI effect at 30 MHz was 60% in ultrasoft (NiCo)70FeSiBMn fibers for a saturating field of about 7 kA/m. The same effect was found at 10 MHz frequency for Permalloy fibers for a larger saturating field (20 kA/m). The transverse GMI effect was smaller (≈35% for NiCo and ≈20% for NiFe), and showed a maximum at low frequency (3 MHz). The magnetic field responses of the fibers are quadratic. An inverse effect of 10%–30% was observed for both types of fibers in longitudinal as well as in transverse field responses at high current frequency and low field strength. All of the observed effects could prove to be very useful for a new generation of high-sensitivity magnetic field sensors. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361532
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  • 4
    Electronic Resource
    Electronic Resource
    Efficiency of TiN diffusion barrier between Al and Si prepared by reactive evaporation and rapid thermal annealing (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7612-7620 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: TiN layers prepared by reactive evaporation and rapid thermal annealing were tested as diffusion barrier between Al and Si. First, Rutherford backscattering spectroscopy (RBS) analysis of Al/Ti(N)/Ti/Si and Al/Ti(N)/Si multilayer structures showed that Si does not diffuse out up to a sintering temperature of 550 °C. However, as the temperature increases beyond 450 °C, Al starts to react with TiN. This reaction leaves less than half the TiN original thickness after a 30 min anneal at 550 °C. The RBS results indicate that TiN, crystallized at a temperature around 850 °C, forms a good barrier between Al and Si. Electrical measurements on various microelectronic devices were performed to verify this. Annealing of Ti(N) at 900 °C leads to a breakdown of p-MOS (metal–oxide–semiconductor) devices while n-MOS devices still work properly. Annealing at 800 °C gives good results on both MOS types except that the contact resistance of a p-type resistor is higher than desired. The electrical circuit failure is mainly due to dopant loss from the active area of the device into the titanium silicide which forms during the rapid thermal annealing at 800 or 900 °C of the deposited Ti(N) layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362418
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  • 5
    Electronic Resource
    Electronic Resource
    The use of elastic recoil detection for stoichiometry determination of reactively evaporated TiN layers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4233-4235 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin TiN layers have been successfully produced by reactive evaporation combined with rapid thermal annealing. Their stoichiometry as a function of depth has been measured by elastic recoil detection combined with time-of-flight. It is shown that this technique is the most appropriate for stoichiometry determination of TiN layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354429
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  • 6
    Electronic Resource
    Electronic Resource
    The determination of phases formed in AlSiCu/TiN/Ti contact metallization structure of integrated circuits by x-ray diffraction (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 132-138 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray diffraction (XRD) analysis was performed in order to determine the crystallographic phases formed in AlSiCu/TiN/Ti contact metallization multilayers of very large scale integration/ultralarge scale integration devices deposited over SiO2 and Si substrates as a function of the annealing temperatures, the oxidation treatment of the TiN diffusion barrier, the presence of a TiN antireflective coating (ARC) and the barrier thickness. The most striking results of this study are the formation of the Ti7Al5Si12 phase and the recrystallization of Al after a 550 °C annealing for a nonoxidized 50 nm TiN barrier deposited on Si substrate. This Ti7Al5Si12 phase formation and the Al recrystallization tend to be blocked when an oxidized TiN barrier is used. It is also suggested that an air break process tends to lower the junction spiking problems since Ti7Al5Si12 is believed to be detrimental to the contact metallization layers. These effects were very weak for the 95-nm-thick TiN barrier. In addition, a TiN-ARC layer reduces the Al recrystallization on SiO2 substrate. Even after an important Ti7Al5Si12 formation, the transmission electron microscopy results showed that a TiN layer is still present but probably ineffective from an electrical point of view. Although the 550 °C anneal produced important changes, no significant difference was observed between the XRD spectra after a 450 and a 500 °C anneal. The identified phases by the XRD analysis were in agreement with a calculated Al-Ti-O-N quaternary isotherm diagram. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366710
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  • 7
    Electronic Resource
    Electronic Resource
    Characterization of reactively evaporated TiN layers for diffusion barrier applications (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1565-1570 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin TiN layers have been successfully produced on Si and SiO2 by reactive evaporation combined with rapid thermal annealing. Results of composition, resistivity, and stress measurements on these layers are reported. The TiN layers have a resistivity around 40 μΩ cm and a high stress of between 1 and 6 GPa. The composition ratio of nitrogen to titanium, measured by elastic recoil detection (ERD), combined with time-of-flight, was found to vary between 0.8 and 1.0 depending on the deposition conditions. In addition to the stoichiometry determination, ERD also clearly shows the presence of a TiSi2 layer between the TiN and the Si substrate. It is also shown that good TiN layers can be produced by reactive evaporation for nitrogen partial pressures between 1.0 and 2.0×10−5 mbar and for titanium evaporation rates between 0.3 and 0.5 nm/s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356392
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  • 8
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing effect on near-surface stoichiometry of GaAs by heavy-ion Rutherford backscattering (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1036-1038 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the near-surface stoichiometry profiles of GaAs wafers subjected to rapid thermal annealing in a forming gas environment using the Rutherford backscattering (RBS) technique with a 33-MeV 16O beam. Our measured profiles quantify the extent of arsenic loss at uncapped wafer surfaces for high-temperature anneals. We have observed that a two-temperature step anneal results in a stoichiometry profile which is nearly RBS indistinguishable from that of an unannealed wafer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349688
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  • 9
    Electronic Resource
    Electronic Resource
    The fabrication of TiN films by reactive evaporation and rapid thermal annealing (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2796-2799 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A process for the fabrication of TiN films compatible with GaAs processing has been developed. The process involves the reactive evaporation of TiN films with a substrate temperature below 100 °C, and a subsequent rapid thermal anneal with quartz halogen lamps for periods of 10–30 s at 300–1100 °C. This method minimizes the oxygen content (4%–8%), and, therefore, minimizes both the electrical resistivity of the TiN films, and the thermal degradation of the underlying GaAs substrate. Annealing TiN at 600 °C for 10 s in forming gas yields TiN sheet resistivity of 190 μΩ cm. The lowest resistivity obtained with this process is 40 μΩ cm at 1100 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340980
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  • 10
    Electronic Resource
    Electronic Resource
    Erratum: "Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy" [J. Appl. Phys. 81, 1905 (1997)] (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 6372-6372 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366538
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