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  • 1
    Electronic Resource
    Electronic Resource
    Auger generation suppression in narrow-gap semiconductors using the magnetoconcentration effect (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5706-5708 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method is presented for the Auger generation suppression in narrow-gap semiconductors using the magnetoconcentration effect for the case when all the generation-recombination mechanisms (Auger, radiative, and Shockley–Read) are taken into account. A numerical solution is given for the kinetic equation determining carrier concentration distribution in a thin semiconductor slab placed in an electric and a magnetic field. The results of the numerical calculation show that the Auger generation suppression becomes very efficient when the concentration of Shockley–Read recombination centers is small enough.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350505
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Generalized model of the isothermal vapor phase epitaxy of (Hg,Cd)Te (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1699-1701 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A generalized model of the isothermal vapor phase epitaxy of (Hg,Cd)Te is presented, which for the first time enables us to predict the compositional profiles of the layers in dependence on growth parameters (temperature and time of deposition, mercury and inert gas partial pressures in the growth chamber, source to substrate spacing). The model can be applied to both closed and opened tube isothermal vapor phase epitaxy of (Hg,Cd)Te, and it explains quantitatively all the peculiarities of the epitaxial growth using this method. The model is confronted with experimental data, which correspond satisfactorily to the calculations without any fitting parameters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98548
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    Paper (German National Licenses)
    Fulltext
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