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A gas phase chemical etchant for boron nitride films (1995)

Harris, Stephen J. ; Doll, Gary L. ; Chance, Derek C. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 67 (1995), S. 2314-2316

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We have demonstrated that boron nitride films deposited on silicon and tantalum can be etched in a hot filament environment with an input gas composition of 1% methane in hydrogen. Etching experiments were carried out at around 800 K on a tantalum foil and at somewhat higher temperatures on silicon substrates. If the etchant is atomic hydrogen or methyl radical, then we estimate etching efficiencies (atoms etched per collision) of ∼10−5 or 10−4 for these species, respectively. © 1995 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.115137

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