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  • 1
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: The structure studies of single crystalline silicon implanted at 340 K or 610 K with Mn+ions (Si:Mn) and subsequently processed under atmospheric and enhanced hydrostatic pressure atup to 1270 K are reported. The defect structure was determined by an analysis ofX-ray diffuse scattering around the 004 reciprocal lattice point and by electron microscopy. Highresolution X-ray diffraction techniques based on the conventional source of radiation were used forthis purpose. The crystal structure of Si:Mn and the Si1-xMnx precipitates in the implantation –disturbed layer were studied by synchrotron radiation diffraction in the grazing incidencegeometry. Processing of Si:Mn results in crystallization of amorphous Si within the buriedimplantation – disturbed layer and in formation of Mn4Si7 precipitates. Structural changes aredependent both on temperature of the Si substrate at implantation and on processing parameters
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6140-6144 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strain commonly observed in layers grown by epitaxial lateral overgrowth (ELO) and arising from interaction of the layers with the mask underneath is studied. We show that GaAs ELO layers grown by liquid-phase epitaxy on SiO2-coated GaAs substrates are strain free if the laterally overgrown parts ("wings") of the layers hang over and have no direct contact with the mask. In other cases, tilting of the wings can be efficiently tailored by controlling the ratio of vertical to lateral growth rates at the beginning of ELO growth. In particular, this has been achieved by growing GaAs ELO layers on SiO2-coated GaAs substrates with increasing density of dislocations. Then, the ratio of vertical to lateral growth rates at the beginning of the growth is increased which in turn leads to reduction of the adhesion-induced bending of the ELO wings, as we observe by high-resolution x-ray diffraction. In the limiting case of heavily dislocated substrates, namely, on GaAs-coated Si, the vertical growth of GaAs ELO is so fast that air-bridged structures without any wing adhesion to the SiO2 mask are obtained. Next, the same model is used to explain our earlier data on negligible bending of GaAs ELO layers on graphite-masked GaAs substrates. In this case, delayed start of lateral growth is caused by the change of the shape of the melt in the corner between the sidewall of the ELO layer and the mask when SiO2 was replaced by graphite film not wetted by the gallium melt. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6994-6998 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An influence of Te doping on the lattice parameter and the thermal expansion of AlxGa1−xAs epitaxial layers was examined by high-resolution x-ray diffractometry over a temperature range 77–673 K. For doped AlxGa1−xAs layers the thermal expansion coefficients were found to be larger relative to undoped samples of the same Al content. This phenomenon is attributed to the change of anharmonic part of lattice vibrations by free electrons and/or ionized tellurium atoms. An increase of thermal expansion caused by doping is a factor which should be taken into account in lattice constant measurements at 295 K. We propose an interpretation of the lattice expansion (examined at room temperature by other authors and by us) of GaAs caused by Te doping in terms of three factors: (i) "size'' effect (bigger Te atoms with respect to As), (ii) free electrons via the deformation potential of the conduction-band minimum occupied by these electrons, (iii) increase of the thermal expansion. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1965-1969 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High resolution x-ray diffraction has been used to study strain in GaAs layers grown on GaAs substrates by the liquid phase epitaxial lateral overgrowth (ELO) technique. We show that the lattice and thermal expansion coefficient mismatch between the subsequent layers and the substrate, as well as the built-in strain in the SiO2 masking film, lead to long-range deformations (macroscopic bending) extending over the whole area of the sample. Moreover, we show evidences that microscopic bending of individual ELO stripes takes place due to adhesion of their laterally overgrown parts to the masking film. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2749-2751 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray diffraction was used to study deformation of GaAs layers grown on Si substrates by liquid phase epitaxial lateral overgrowth (ELO). We show that, in the direction perpendicular to seeding lines, the GaAs ELO stripes bend outwards from the mask due to the tensile strain in the GaAs buffer layer. As narrow as 94 arcsec (004) rocking curves have been measured for the laterally grown parts of ELO stripes what indicates the high quality of ELO GaAs layers grown on GaAs-coated Si substrates. We use our model of strain relaxation via bending of laterally grown parts of ELO layers to explain some recently published results on bending of ELO GaN layers on SiC and sapphire substrates. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6937-6939 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray diffraction has been used to study the influence of the mask material on properties of GaAs layers grown by the liquid phase epitaxial lateral overgrowth (ELO) on (100) GaAs substrates. We show that ELO stripes bend towards the SiO2 mask in the direction perpendicular to seeding lines in a similar way to that as studied recently by x-ray topography for Si lamellae [H. Raidt, R. Kohler, F. Banhart, B. Jenichen, A. Gutjahr, M. Konuma, I. Silier, and E. Bauser, J. Appl. Phys. 80, 4101 (1996)]. The bending disappears when the mask is removed by selective etching. This microscopic bending is reduced by nearly 2 orders of magnitude when graphite instead of SiO2 is used to mask the substrate. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 539-541 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice constants of GaAs layers grown by molecular beam epitaxy were examined by using the high resolution x-ray diffractometer. For highly doped samples (up to 9×1018 cm−3 of free-electron concentration) we observed an increase of the lattice constant with respect to the undoped layers. Since substitutional silicon atoms decrease the lattice constant of GaAs, the results are explained by the influence of free-electrons via the deformation potential of the Γ minimum of the conduction band. The best fit to our diffractometric data was obtained for the band-gap deformation potential equal to −8.5 eV. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Tetrahedron Letters 14 (1973), S. 1179-1182 
    ISSN: 0040-4039
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Berlin, Germany : Blackwell Verlag GmbH
    Journal of applied ichthyology 20 (2004), S. 0 
    ISSN: 1439-0426
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Testicular development was followed in juvenile sea trout (Salmo trutta morpha trutta L.) stocked in a river near Szczecin, Poland in 1992. Fish age was between 3 and 6.5 months post-hatch. Fish were sampled monthly. Sex-dependent differences in gonad structure and timing of their differentiation were observed after dissection under light microscope. In 3-month-old fry, when female gonads were differentiating (morphologically and cytologically), gonads of potential males remained undifferentiated. Development of a gonad into a male was primarily indicated by the formation of seminiferous tubules (lobules). In the sea trout under study, the lobules formed between the fourth and fifth month post-hatch (July–August) (fork length 〉5.6 cm). There were no significant differences in body fork length between fish with and without lobules, although mean length of the former was higher. Early spermatogenesis began once the type B spermatogonia appeared. The timing of their appearance differed widely among individuals. Type B spermatogonia were found for the first time in a 5-month-old male (late August). Spermatocytes and cells of subsequent stages appeared in an incompletely matured 6.5-month-old male as ‘attempted spermatogenesis’ (fork length = 8.8 cm). Most examined males remained immature, their germ cells not having passed the type A spermatogonium level. In 6.5-month-old alevins, no significant differences in fish size between individuals beginning spermatogenesis (stage II) and those at stage I were detected, although those at stage II were longer. As the male gonad structures were forming, the quantitative gonad parameters were gradually increasing, even when referring to the unit area; only the gonocyte size gradually decreased. Generally, each observed monthly or bimonthly difference was statistically significant (P 〈 0.05).
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