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  • 1
    Electronic Resource
    Electronic Resource
    Very-low-energy electron microscopy of doped semiconductors (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2931-2933 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Imaging of As- and B-doped silicon regions has been performed in a scanning electron microscope operated in the cathode lens mode, with incident electron energies (EP) as low as 15 eV. The doped regions of n+ (As, 2.5×1020 cm−3) and p+ (B, 8×1019 cm−3) on n-type silicon (∼1015 cm−3) show distinct contrast with electron energies of about 3 keV. The brightest region is n+ followed by p+, then the n-type substrate. The highest contrast for the p+ and n+ type regions is reached at about EP=300 and 15 eV, respectively. The contrast mechanisms are explained in terms of metal-semiconductor contact assuming an adventitious carbon film at the surface. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1415045
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  • 2
    Electronic Resource
    Electronic Resource
    Auger electron microscopy: An overview (1994)
    Springer
    Czechoslovak journal of physics 44 (1994), S. 173-193 
    Details
    ISSN: 1572-9486
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The aim of Auger electron imaging is to obtain quantitative surface elemental distribution maps at high spatial resolution. The realization of this goal is complicated by many instrumental effects and by spurious data processing contributions giving rise to an image contrast unrelated to the specimen surface composition. The critical properties of scanning Auger microscopy that may cause such a false information or imaging artefacts are reviewed. Instrumental or data processing related effects appear in the case of the beam current variation, of the background slope effect, and of the use of a combined peak to background ratio. The second set of artefacts are mainly due to the significant differences between the penetration depth of the exciting primary electrons and the escape depth of the Auger electron signal. In this case the net effect is a surface elemental contrast which is dominated by the substrate or by the overlayer rather than by the surface under investigation. In addition, there are also topographical effects of the specimen under test which normally affect the Auger yield and hence the contrast in the image. Methods for the successful suppression of some of these artefacts are outlined. They are based on the creation of reference images from complementary signals acquired by additional detection channels in parallel with the Auger signal of interest.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01694485
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  • 3
    Electronic Resource
    Electronic Resource
    Spectrum Synthesis Based on Non-linear Addition (1996)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 24 (1996), S. 163-172 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: One of the proposed approaches in the literature for quantitative analysis in AES is the linear addition of elementalspectra acquired in the direct energy mode (N(E) vs.E andE·N(E) vs.E). Quantification is then achieved by matching the shape of the added spectra to that of an unknown that was also collected under identical experimental conditions. However, it is shown here that the linear combination of elemental spectra employed in this approach has no real justification in theory. Any agreement with experiment found using this approach can therefore be of doubtful value. To avoid uncertainty, non-linear addition formulae that take the matrix effects (of the substrate) into consideration are developed. Results obtained with these formulae on AuCu alloys are described. The observed success of the linear addition is explained in terms of more rigorous non-linear addition.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Sources of Internal Scattering of Electrons in a Cylindrical Mirror Analyser (CMA) (1996)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 24 (1996), S. 152-162 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: A number of possible sources of internal scattering of electrons in a single-pass Varian cylindrical mirror analyser (CMA) have been identified and their relative contributions to the electron spectral background evaluated. These sources include: the inner surfaces of the outer cylinder; the input and output apertures of the inner cylinder; thefield trimmers between the two cylinders; the walls of the exit aperture in front of the electron detector; the outersurfaces of the inner cylinder. A theory/experiment comparison of the above sources has verified that the two most significant of these are the walls of the exit aperture and the field trimmers. The other sources contribute only negligibly to the total signal of internally scattered electrons. Simple modifications of the spectrometer and its detector show a large reduction in the internal scattering signal. A simple experimental measurement for determining the relative contribution of the various internal scattering sources is suggested. This measurement is recommended instead of the commonly used peak-to-background ratios as a diagnostic tool for detecting and evaluating all the above-mentioned sources of internal scattering of electrons in a CMA.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Monte Carlo Calculations of The Depth Distribution Function in Multilayered Structures (1997)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 25 (1997), S. 341-351 
    Details
    ISSN: 0142-2421
    Keywords: depth distribution function ; electron transport ; multilayered structures ; Monte Carlo simulation ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The statistical-weights Monte Carlo program of Cumpson for the calculation of depth distribution functions (DDF) has been extended in order to allow faster operation by use of a compiled language, C++, and the simulation of multilayer structures. The simulation of Auger electrons originating from a homogeneously distributed trace impurity has been performed for a number of thin films of different thickness and atomic numbers on substrates of different atomic number and of semi-infinite thickness. The DDFs from bulk copper and gold samples and double and trilayer structures of carbon, copper and gold are presented. In both the bi- and trilayer structures it is found that the gradients of the DDF seem to switch fairly abruptly between the characteristics for each element at the boundary. © 1997 John Wiley & Sons, Ltd.
    Additional Material: 10 Ill.
    Type of Medium: Electronic Resource
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    Paper (German National Licenses)
  • 6
    Electronic Resource
    Electronic Resource
    A third-generation Auger microscope using parallel multispectral data acquisition and analysis (1991)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 17 (1991), S. 71-84 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The Design and construction of an ultrahigh vacuum multi-imaging scanning electron microscope is described. The microscope is designed to contain two field electron emission columns and can acquire simultaneous digital images from a 16-channel electron spectrometer, a four-quadrant back-scattered electron (BSE) detector, an Si(Li) x-ray detector, a SEM detector and the current flowing to ground through the sample. Because there is exact spatial registration between corresponding pixels in each of the images, it is possible to use the image set to make quantitative interpretations of the surface and subsurface chemistry. This is done using mathematical manipulations of the image set, together with models for the SEM, BSE and Auger signals. Techniques are described for setting up the alignment and characterizing the field of view and transmission function of the microscope and its spectrometer. Examples of multi-imaging from simple samples are given. The close coupling between the microscope and its control and interpretation computers provides considerable power for the analysis of inhomogeneous surfaces.
    Additional Material: 16 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740170203
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  • 7
    Electronic Resource
    Electronic Resource
    The use of metal/semiconductor structures to develop MULSAM analytical techniquesThis paper forms the text of an invited talk read at ECASIA 91, 14-18 October 1991, Budapest, Hungary. (1992)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 18 (1992), S. 295-302 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The structures that can be fabricated by integrated circuit technology are very useful as well-characterized samples for testing image processing methodologies in multi-imaging instruments. Such samples are employed in the work described in this paper to evaluate schemes for correction of spectral background, substrate backscattering, surface topography and beam current fluctuation effects out of Auger images. The outstanding problems associated with the effects on Auger image contrast of sharp edges bounding overlayer structures are outlined and possible solutions are discussed.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740180502
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  • 8
    Electronic Resource
    Electronic Resource
    Prediction of auger backscattering factors from measurements of spectral backgrounds (1986)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 9 (1986), S. 99-103 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The shape of N(E) has been obtained from a carefully characterized electron spectrometer for 24 different elements and compounds. The secondary electron cascade has been found to obey a form N(E) = AE-m. A and m have been measured and used together with a model of the energy distribution of rediffused primary electrons to calculate an Auger backscattering factor for each material when the primary energy is 20 keV. These calculations have been compared with backscattering coefficients measured at the carbon 1s binding energy in the same instrument on the same samples. The results show the backscattering factor to be linear in atomic number. The measurement of A and m from a spectrum can be used to estimate the backscattering factor within an estimated error of about ±0.05.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740090204
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  • 9
    Electronic Resource
    Electronic Resource
    The spectral background in electron excited Auger electron spectroscopyInvited paper presented at the Quantitative Surface Analysis (QSA-4) Conference, Teddington UK, November 1986. (1988)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 11 (1988), S. 173-181 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The power law form of the secondary electron cascade from electron bombarded solids first suggested by Sickafus is explored both theoretically and experimentally. Backgrounds of the form AE-m are shown to result from a range of different theoretical models of the electron-solid interaction in which generation of fast secondaries by electron Compton scattering and transport to the surface are treated separately. The precise value of the exponent m is seen to depend upon the balance between elastic scattering strength and the energy dependence of the inelastic mean free path.The experimental results for eight different samples with atomic numbers between 6 and 78 are reported. The constant A appears to be related to the number density of valence band electrons. The values of m fall within the range predicted by the theoretical arguments. The generality of the form AE-m to many materials is useful for the estimation of both the Auger back-scattering co-efficient and the energy dependence of the inelastic mean free path from measurement of the parameters A and m.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740110402
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  • 10
    Electronic Resource
    Electronic Resource
    Quantifying data from Auger spectra and images (1988)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 11 (1988), S. 266-278 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: A method for quantifying Auger spectra and including matrix effects is described. This method corrects iteratively for the effects of electron back-scattering, the inelastic mean free path and atomic density in the sample using established methods. New algorithms have been developed to assist the user interactively with the analysis of spectra collected from surfaces covered by thin films of unknown composition or thickness, or by coverage of another material. Error analysis has been included for both homogeneous and thin film cases. A ‘figure of merit’, used to inform the user if a thin film model of the surface is accurate, is introduced. The algorithms can be implemented on a small microcomputer. Their application to quantitative Auger analysis by multi-spectral imaging is also described. Each point in a set of images has been corrected for the factors that influence the Auger current to arrive at surface compositions at each pixel for each element. Some of the advantages and problems of quantifying Auger images will be outlined. The use of multi-spectral Auger images is seen as a powerful means of identifying surface phases of materials and is given the acronym MULSAM - MULti-Spectral-Auger Mapping.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740110507
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