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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3727-3730 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using the classical oscillator model, the optical dielectric functions for amorphous alumina (a-Al2O3) and gamma alumina (γ-Al2O3) thin films prepared by ion implantation and subsequent annealing of sapphire (α-Al2O3) substrates were determined for the first time from analysis of infrared reflection spectra. Two transverse optical modes at 422 and 721 cm−1 were obtained for the a-Al2O3 film while four modes at 357, 536, 744, and 807 cm−1 were identified for the γ-Al2O3 film. Also, the problems involving the analysis of modes with large damping are discussed.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1199-1201 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid thermally annealed silicon-implanted x-cut α-quartz samples have been examined by Rutherford backscattering and Raman microprobe spectroscopy. The data indicate that the silicon has diffused at 1200 °C to form a buried layer of crystallites of size 1–10 μm. The crystallites are preferentially oriented and under substantial stress.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 27 (1992), S. 5895-5904 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Single crystals of α-Al2O3 were implanted with iron ions at room temperature to fluences ranging from 4×1016 Fe cm−2 to 1×1017 Fe cm−2. The microstructure and composition in the implanted region were examined using analytical electron microscopy techniques. Special emphasis was placed on monitoring the microstructural changes which take place during post-implantation annealing. Clusters of metallic α-Fe were identified in the specimen after implantation to a dose of 1×1017 Fe cm−2. Analytical electron microscopy of implanted specimens annealed in oxygen revealed the redistribution of the implanted iron and the formation of surface precipitates of α-Fe2O3, subsurface precipitates of various forms of spinel, and, in some cases, subsurface precipitates of iron, depending on the annealing temperature. Examination of implanted specimens annealed under reducing conditions revealed the presence of precipitates of α-Fe.
    Type of Medium: Electronic Resource
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