ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The effects of initial surface morphology on the early stages of porous SiC formationunder highly biased photoelectrochemical etching conditions are discussed. We etched both Si-faceand C-face polished n-type 6H SiC with different surface finishes prepared either by mechanicalpolishing or by chemical mechanical polishing at NOVASiC. For both Si-face and C-face porousSiC samples, a variety of surface and cross sectional porous morphologies, due to different surfacefinishes, are observed. The proposed explanation is based on the spatial distribution of holes at theinterface of the SiC and electrolyte inside the semiconductor
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.743.pdf
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