Electronic Resource
s.l. ; Stafa-Zurich, Switzerland
Solid state phenomena
Vol. 108-109 (Dec. 2005), p. 603-608
ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
We report on electron holography as a promising candidate for diagnostics in silicon technology and research. Electron holography determines the local phase shift of the electron wave passing through a sample. The phase is proportional to the 2D projected electrostatic potential in the sample and thus reveals p-n junctions and, indirectly, doping. We demonstrate detection of submonolayer boron layers in Si and SiGe, measurement of Ge concentration in SiGe and qualitative 2D oxygen mapping in SiO2/Si structures with 0.5 nm resolution, and comparison of doping in two bipolar transistors with different base implant. Resolution and noise limits are discussed
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/22/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.108-109.603.pdf
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