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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 47 (1982), S. 4713-4717 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Real-time infrared attenuated total reflection (ATR) spectroscopy and spectroscopic ellipsometry (SE) have been applied to assess depth profiles of Si–Hn (n=1–2) bonding modes in Si:H thin films. We have established an ATR data analysis procedure and the depth profiles of the Si–Hn bonding modes were readily obtained from incorporation rates of Si–Hn bonds at each film thickness estimated by SE. In an attempt to investigate the nucleation reaction of microcrystalline silicon (μc-Si:H) from the hydrogenated amorphous silicon (a-Si:H) phase, a series of Si:H thin films were prepared by an rf plasma-enhanced chemical vapor deposition using various hydrogen dilution ratios R=[H2]/[SiH4]. Real-time ATR and SE revealed that hydrogen content in the a-Si:H layers is uniform toward the growth direction. On the contrary, in the μc-Si:H film deposited at high R, a drastic reduction in the SiH hydrogen content is observed after the μc-Si:H nucleation, whereas the SiH2 hydrogen content is not sensitive to the phase transition. We find a weak variation in the hydrogen content in the a-Si:H layers deposited at various R, and no significant changes are observed in the a-Si:H bulk layers formed at onsets of μc-Si:H nucleation. The above results suggest that the μc-Si:H nucleation reaction occurs near the a-Si:H surface, but not in the a-Si:H bulk layer. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 242-246 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carrier transport properties of (ZnS)3(ZnSe)42 ordered and ZnS0.07Se0.93 disordered alloys are studied. Iodine-doped ZnS0.07Se0.93 was grown by hydrogen radical-enhanced chemical vapor deposition at a low temperature of 200 °C. These iodine-doped ZnS0.07Se0.93 are characterized by sharp x-ray diffraction peaks and dominant blue band-edge emissions in photoluminescence spectra. It was found that (ZnS)3(ZnSe)42 ordered alloys show higher electron mobility over 100 cm2/V s than that of ZnS0.07Se0.93 disordered alloys at a low electron concentration of ∼1016 cm−3, even though these crystals have the same sulfur composition and crystallinity. This mobility enhancement in the ordered alloys is attributed to the elimination of "disorder scattering'' originated from random atomic fluctuations in the disordered alloys. Carrier scattering mechanisms and donor activation processes in the ordered and disordered alloys were further determined by a temperature dependence of Hall measurement. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2363-2366 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: "Sawtooth'' superlattices of Zn(S,Se) were grown on GaAs substrates by a layer-by-layer atomic epitaxy growth technique. Larger scale variations in band gap were introduced by systematically varying the ratio of ZnS and ZnSe thickness over greater distance scales. These larger scale variation were themselves repeated in order to produce a superlattice in which the band gap had a sawtooth shaped profile. The structure and optical properties of these new materials were characterized by x-ray diffraction and photoluminescence measurement. The x-ray diffraction spectra showed satellite peaks corresponding to the large scale variations in structure. The strong blue photoluminescence peaks were observed and consistent with hole trapping in the sawtooth potential wells. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3927-3933 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Iodine-doped ordered alloys, given in a form of (ZnS)3(ZnSe)42, were grown on a GaAs(100) substrate by hydrogen radical-enhanced chemical vapor deposition using atomic layer epitaxy. Iso-buthyliodide was used for the first time as the doping source. A very high Hall mobility of 470 cm2/V s was obtained at room temperature in the slightly I-doped sample (3×1016 cm−3). This high mobility is due to the elimination of structural fluctuations by forming a two-dimensional ordered structure, which was confirmed by the satellite peaks in x-ray diffraction spectra. Blue band-edge emissions were found to be dominant at 35 K and room temperature in photoluminescence spectra. These results indicate that the formation of defects was minimized in these crystals by the layer-by-layer structure and the low-temperature growth at 200 °C. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5510-5515 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown ZnSxSe1−x alloys on a GaAs(100) substrate in a wide compositional range (0≤ x≤0.3) by the insertion of the ZnS monolayer into the ZnSe multilayers. We have succeeded in growing these alloys at temperatures as low as 200 °C using the hydrogen radical enhanced chemical vapor deposition (HRCVD) in the atomic layer epitaxy (ALE) mode. In the ALE-HRCVD, it is the self-limiting action, realized on both surfaces covered with Se and Zn, which leads to the high-quality crystals. In the photoluminescence spectra of these ZnSxSe1−x alloys we have observed only the sharp emission lines at the band edges (2.80–2.90 eV) which we attribute predominantly to the excitons. The structural fluctuations have been remarkably reduced by the layer-by-layer method. In addition, we have found very low defect density in these crystals despite the large lattice deformation due to the lattice mismatch. An ordered alloy [(ZnS)2(ZnSe)24]69 has been made by the optimization of the growth conditions.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Geophysical journal international 117 (1994), S. 0 
    ISSN: 1365-246X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: An efficient method to synthesize surface waves in a thin sedimentary basin exhibiting lateral heterogeneities is proposed. This method is based on the direct boundary element method; that is, it represents the wavefield by integral equations along boundaries. the excitation and propagation of surface waves by lateral heterogeneities are incorporated into the numerical scheme by using propagation operators and superposition, where the Green's function is computed by the summation of normal modes when the horizontal distance between the source and receiver is large, which reduces computation costs. Using the properties of the surface-wave part of Green's function, the number of elements needed for discretization can be reduced. This formulation can be effective for both the physical interpretation of certain observed phases and for numerical calculations. In this paper, only 2-D SH problems are considered, and the extension to 2-D P-SV problems and 3-D problems is discussed briefly.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1573-0581
    Keywords: real-time observation network ; ocean-bottom-seismometer ; velocity seismometer ; accelerometer ; tsunami sensor ; pressure data ; tsunami record ; P- and S-waves ; hypocenter determination ; Sagami trough ; subduction zone ; Tokyo metropolitan area ; Philippine sea plate
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences , Physics
    Notes: Abstract We installed a real-time operating regional observation network of Ocean-Bottom-Seismometers, connected to an electro-optical fiber communication cable, at the Sagami trough subduction zone, just south of the Tokyo metropolitan area, central Japan. The network, called ETMC, has six seismic observation sites at approximately 20 km spacing. In addition, there are three tsunami observation sites along the ETMC network to monitor the propagation process of tsunamis around the Sagami trough region. The on-line data from the ETMC has been improving the detection capability of smaller-magnitude earthquakes even at areas close to the margin of the trough. The ETMC data analyzing system, which has a function of real-time digital filtering for each seismic channel, can read the arrival times of P- and S-waves precisely, constraining well the automatic on-line hypocenter locations. The network has been providing useful information regarding the bending and downgoing process of the Philippine sea plate at the Sagami trough subduction zone. The pressure sensors of the installed network have a detection capability of tsunami wave trains with an amplitude of less than 1 cm. For example, the sensors recorded the full time history of tsunami wave trains, with mm order resolution, originating from a ‘tsunami earthquake’ with 5.7 MW and the tsunami magnitude of 7.5 occurred near Tori Shima (Tori Is.) of the Izu-Bonin Is. arc on September 4, 1996. The maximum amplitude of the tsunami signals on the trough-floor was approximately 1 cm (P-P), in contrast with approximately 20 cm (0-P) at a coastal site on Izu-Oshima, near the trough. Also, the pressure sensors observed tsunamis due to a large tsunami earthquake (7.1 MW) at the northern New Guinea, on July 17, 1998.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] We used BmNPV T3 isolate, which has been plaque-purified on BM-N cells3. To identify the polyhedrin gene on the viral genome of the BmNPV T3 isolate, cDNA made from messenger RNA isolated from infected fat bodies was used as a probe. In in vitro translation experiments in reticulocyte lysates, over ...
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1573-5044
    Keywords: Berberine ; biosynthetic activity ; Coptis japonica ; cultured cells ; high-alkaloid productivity ; Ranunculaceae
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Several cell lines of Coptis japonica with different alkaloid productivities were characterized to obtain information on how a high metabolite production is established. High and low metabolite producing cells, except those from one cell line, showed similar growth kinetics and a similar pattern of nutrient uptake. Amino acid contents, especially that of tyrosine, differed between cell lines, but no correlation was found between the amino acid or tyrosine levels and alkaloid production. Since the addition of tyrosine did not increase the production of berberine, this primary substrate is apparently not the limiting factor for high production in cultured Coptis cells. The addition of berberine to the medium revealed that low-producing cells also have the ability to store alkaloid, and that low productivity is not due to decomposition of alkaloids which have been produced. The direct measurement of the biosynthesis of berberine using 14C-tyrosine clearly showed that high-producing cells had a higher biosynthetic activity of berberine from tyrosine than low-producing cells. The measurement of enzyme activities in berberine biosynthesis indicated that the early steps of berberine biosynthesis are important in the increased production of berberine.
    Type of Medium: Electronic Resource
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