ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Real-time infrared attenuated total reflection (ATR) spectroscopy and spectroscopic ellipsometry (SE) have been applied to assess depth profiles of Si–Hn (n=1–2) bonding modes in Si:H thin films. We have established an ATR data analysis procedure and the depth profiles of the Si–Hn bonding modes were readily obtained from incorporation rates of Si–Hn bonds at each film thickness estimated by SE. In an attempt to investigate the nucleation reaction of microcrystalline silicon (μc-Si:H) from the hydrogenated amorphous silicon (a-Si:H) phase, a series of Si:H thin films were prepared by an rf plasma-enhanced chemical vapor deposition using various hydrogen dilution ratios R=[H2]/[SiH4]. Real-time ATR and SE revealed that hydrogen content in the a-Si:H layers is uniform toward the growth direction. On the contrary, in the μc-Si:H film deposited at high R, a drastic reduction in the SiH hydrogen content is observed after the μc-Si:H nucleation, whereas the SiH2 hydrogen content is not sensitive to the phase transition. We find a weak variation in the hydrogen content in the a-Si:H layers deposited at various R, and no significant changes are observed in the a-Si:H bulk layers formed at onsets of μc-Si:H nucleation. The above results suggest that the μc-Si:H nucleation reaction occurs near the a-Si:H surface, but not in the a-Si:H bulk layer. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1457535
