Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    0°–360° bistable nematic liquid crystal display with large dΔn and high contrast (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1722-1725 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new mode of 0°–360° bistable twisted nematic (BTN) liquid crystal display is developed by using a parameter space method. This new mode possesses a large dΔn value that provides a possibility of using a 4.8–7 μm cell gap and a 6.5 V operating voltage for the new 0°–360° BTN cells. The high-contrast ratios above 80 within −80°–80° viewing-angle ranges are obtained experimentally in a horizontal direction, and the highest contrast ratio achieved is up to 250. In the contrast ratio, the experiment's results concur with the simulation results. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1303053
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    π/2 and 5π/2 twisted bistable nematic liquid crystal display (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2673-2676 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A π/2 and 5π/2 twist bistable nematic liquid crystal cell is optimized in optics by a parameter space approach. The cell possesses good contrast ratio, a preferable dΔn value, a wide viewing angle, and black–white display. Three switching wave forms can be used to switch the cell between π/2 and 5π/2 twist states. Controlling the selection voltage amplitude can provide gray scales for the cell. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372240
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Determination of the direction of the "easy" axis at a twisted nematic liquid crystal-wall using half-leaky guided modes (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4553-4557 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theoretical analysis and numerical modeling indicate that, under high fields, the director of a thin region of liquid crystal close to the wall of a twisted nematic cell returns to the "easy" axis on the interface. Polarization conversion reflectivity signals are recorded for half-leaky guided modes from a twisted nematic cell subject to high ac fields. By fitting model theory to reflectivities recorded for a particular region of incidence angles, the director twist at the cell walls is deduced. In the high-field limit, this then gives the original director alignment axis, the easy axis, at the wall of a twisted nematic cell. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1311812
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Optimization of reflective bistable twisted nematic liquid crystal displays (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2373-2376 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The contrast ratio of reflective bistable twisted nematic displays are optimized by means of a parameter space approach. By plotting the contrast ratio as a function of the twist angle and thickness-birefringence product of the display, the regions where the display shows the best contrast ratio are clearly shown. Both the absolute reflectance and wavelength dispersion of two bistable twisted states are investigated. It is confirmed that high contrast ratio of over 100 and reflectance of 100% with polarized light input are possible for such reflectance bistable displays. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371062
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Fully leaky guided wave determination of the original alignment direction for the directors at the walls in a twisted nematic liquid crystal cell (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1744-1751 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fully leaky guided optical modes are used to explore the director profile in a twisted nematic liquid crystal cell built using a pair of high-index glass plates. This allows access to the pseudocritical angles corresponding to the liquid-crystal indices. Optical data is recorded over a range of angles of incidence with the cell subject to ac voltages. At higher-applied fields, the director in the cell center aligns almost homeotropically. Then the two surface regions become elastically decoupled, the directors at the surfaces realigning along the original alignment axes. Beyond the pseudo-critical angle corresponding to the low index of the liquid-crystal two minima of the polarization conserving transmission signal, for transverse electric polarization, TSS (over a particular range of incidence angles) are found as the cell rotation angle is changed. These two minima give the original alignment directions of the director, the easy axes, at the two substrates, information vital to the measurement of the torsional anchoring energies at the interfaces of the cells. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1491025
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Cathodoluminescent properties at nanometer resolution through Z-contrast scanning transmission electron microscopy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 594-596 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of porous structures in laser-ablation-deposited Y2O3:Eu thin films and their correlation with luminescent properties by a combination of transmission electron microscopy and Z-contrast scanning transmission electron microscopy (Z-STEM). Depending on growth conditions, a large density of voids is incorporated into the films, which leads to a much increased surface area. Cathodoluminescence imaging in the STEM directly reveals a 5 nm "dead layer" around each void, which is responsible for the observed reduction in luminescence efficiency. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.127055
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Formation of ordered Ge quantum dots on the Si(111)–(7×7) surface (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3317-3319 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a pathway for the formation of ordered Ge quantum dots on Si(111)–(7×7) substrate. Self-assembled growth of Ge quantum dots on the Si(111)–(7×7) surface has been investigated using scanning tunneling microscopy. The Ge is grown on the substrate by solid phase epitaxy at room temperature. It has been found that the deposited submonolayer Ge can aggregate and form ordered Ge quantum dots on the surface through controlling the annealing temperature. The formation of ordered Ge quantum dots is due to the preferential adsorption sites of Ge on Si(111)–(7×7). The formed Ge quantum dots may have a great potential in the application of nanodevices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1419052
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Atomic structure of Ba0.5Sr0.5TiO3 thin films on LaAlO3 (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2542-2544 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Perovskite barium strontium titanate Ba0.5Sr0.5TiO3(BST) thin films were grown on (001) LaAlO3 (LAO) using pulsed-laser ablation. The microstructures of the as-grown BST films were studied with selected electron diffraction, transmission electron microscopy, and scanning transmission electron microscopy. The BST thin films are oriented with their [001] directions parallel to the 〈102〉 directions of the LAO. Both cross-sectional and plan-view studies show the BST films to be single crystals with smooth surfaces. The interfaces were seen to be atomically sharp by cross-sectional, high-resolution electron microscopy. The density of misfit dislocations was consistent with the 4.3% lattice mismatch, and they were found to be dissociated into partials. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125071
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Epitaxial growth of Y2O3:Eu thin films on LaAlO3 (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2223-2225 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the epitaxial growth of europium-activated yttrium oxide (Y2O3:Eu) (001) thin films on LaAlO3 (001) using laser ablation deposition at a substrate temperature of 775 °C and 10 Hz pulse repetition rate. The orientation relationship between the films and the substrates is [110]Y2O3(parallel)[100]LaAlO3 and [−110]Y2O3(parallel)[010]LaAlO3 which results in a lattice mismatch of only 0.8%. Transmission electron microscopy (TEM) of the films reveals the single crystalline Y2O3:Eu thin film to contain small pores. Scanning transmission electron microscopy (STEM) imaging of the films shows the substrate always terminates with the Al sublattice. Moreover, the STEM reveals that no precipitates of Eu had formed in the films. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124971
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Ionized-cluster-beam deposition and electrical bistability of C60–tetracyanoquinodimethane thin films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2192-2194 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an ionized-cluster-beam (ICB) deposition and the electrical bistability of C60–tetracyanoquinodimethane (TCNQ) thin films. The films are fabricated by using an ionized-cluster-beam deposition method in a high vacuum system. The as-deposited films were characterized by transmission electron microscopy and optical absorption spectroscopy, which verified the formation of the charge-transfer complex system in C60–TCNQ thin films and the microstructure of these thin films. The structure and the electrical property of the ICB deposited Ag-TCNQ thin films are also presented. The possible conductive mechanism of these ICB deposited thin films is discussed in the letter. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116009
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...