ISSN:
1573-4854
Keywords:
porous silicon
;
photoluminescence
;
electroluminescence
;
quenching
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Carrier transport and photoluminescence-quenching mechanisms in reverse-biased p-type porous silicon in contact with an aqueous electrolyte are investigated. Concerning transport mechanisms investigation, experiments are based on the study of the photo-induced current as a function of the porous layer thickness. The liquid-impregnated porous silicon skeleton is found under equipotential conditions. Transport of electrons (supplied by the substrate) in porous silicon is shown to be dominated by a diffusion process. Photoluminescence-quenching is investigated by using a reverse-biased p-type porous silicon illuminated at 365 and 809 nm simultaneoulsy. The first illumination generate photoluminescence and the second supplies carriers in the substrate. A progressive photoluminescence-quenching has been observed, under a constant applied voltage, by increasing progressively the electron concentration in the porous layer. This original experiment allows to reject the hypothesis of an electric-field-induced separation of carriers as the photoluminescence-quenching mechanism in wet porous silicon, while it strongly supports the mechanism based on Auger recombination.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1009670300872
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