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  • 1
    Electronic Resource
    Electronic Resource
    Enhancement of the quantum efficiency and stability of electroluminescence from porous silicon by anodic passivation (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2021-2023 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of anodic oxidation as a post-treatment of porous silicon has been investigated to enhance the external quantum efficiency of electroluminescence from a device based on a thin transparent indium tin oxide contact on porosified n+-type silicon. Enhancement in external quantum efficiency of three orders of magnitude has been obtained. We report here an external quantum efficiency of 0.21%. The treatment also greatly improves the stability of the device. Results can be explained by the fact that anodic oxidation considerably reduces leakage current flowing via nonconfined silicon. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122355
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