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  • 1
    Electronic Resource
    Electronic Resource
    Electron affinity of AlxGa1−xN(0001) surfaces (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2503-2505 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic properties and the electron affinities of AlxGa1−xN(0001) surfaces were investigated by ultraviolet photoemission spectroscopy (UPS) over the whole composition range. The samples were prepared by N-ion sputtering and annealing. Surface cleanliness and stoichiometry were monitored with x-ray photoemission spectroscopy. Samples with high aluminum content showed traces of oxygen which could not be removed by further cleaning cycles. However, we have evidence that the oxygen is located in the bulk and not at the surface. From the UP spectra the ionization energies and electron affinities as a function of composition x were determined. A decrease in electron affinity with increasing aluminum content was found, but the electron affinity remains positive for all x. Thus, earlier predictions of negative electron affinity for high aluminum content were not confirmed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1367275
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  • 2
    Electronic Resource
    Electronic Resource
    Temperature dependence of electromigration dynamics in Al interconnects by real-time microscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1083-1085 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Real-time transmission electron microscopy (TEM) was used to directly examine the temperature dependence of electromigration-induced void and failure dynamics over the range 200–350 °C. The studies were done using submicron Al interconnects and a special sample stage, which allowed TEM observations to be recorded while heating and passing current through the sample. A novel sample design dramatically minimized any Joule heating in the runners. Our experiments directly reveal that the mechanism responsible for void and failure dynamics at temperatures 〈250 °C is distinctly different from that at higher temperatures. These results have implications regarding methods used for predicting electromigration reliability at use conditions from accelerated test data. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122091
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    Paper (German National Licenses)
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